Chemically deposited cubic/orthorhombic SnS superstrate solar cells with ZnS-CdS window and copper selenide back interface layers
Por:
Ayala-Mató F., López-Cruz L.A., Barrios-Salgado E., Nair M.T.S., Nair P.K.
Publicada:
1 ene 2026
Resumen:
© 2026 Elsevier B.V.Solar cells of tin sulfide thin films with orthorhombic crystal structure (SnS-ORT) and optical bandgap (Eg) of 1.1–1.5 eV deposited on SnS with a cubic crystal structure (SnS-CUB) and Eg of 1.7 eV were used in this work as absorbers and ZnS-CdS thin film as window layer in a superstrate configuration. These solar cells showed open circuit voltages, VOC > 0.5 V. They were prepared by chemical deposition of the different components on fluorine-doped tin oxide (SnO2:F, FTO). Solar cells of FTO/ZnS(80 nm)/CdS(20 nm)/SnS-CUB(180 nm)/SnS-ORT(380 nm)/C-Ag gave open circuit voltage (VOC) of 0.503 V; short circuit current density (JSC) of 3.76 mA/cm2; fill factor (FF), 0.29; and ? of 0.56 %. Solar cells with a back interfacial layer of copper selenide (Cu1.78Se): FTO/ZnS(80 nm)/CdS(20 nm)/SnS-CUB(180 nm)/SnS-ORT(380 nm)/Cu1.78Se(10 nm)/C-Ag gave VOC, 0.515 V; JSC, 11.96 mA/cm2; FF, 0.37; and ? of 2.29 %. Capacitance-voltage measurement made on the device with the Cu1.78Se layer at the SnS-ORT/C interface showed a built-in junction voltage of 0.974 V, acceptor concentration of 2.66 × 1014 cm-3, and a space charge layer width of 620 nm. Electrochemical impedance spectroscopy of the devices showed that the Cu1.78Se layer improved the interfacial quality and device performance. These results demonstrate that a Cu1.78Se back interface layer helps toward improving SnS solar cells.
Filiaciones:
Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Temixco, Morelos 62580, Mexico
|