Fabrication and Characterization of Hybrid Films Based on NiFe2O4 Nanoparticles in a Polymeric Matrix for Applications in Organic Electronics
Por:
Sánchez Vergara M.E., Agraz Rentería M.J., Vazquez-Olmos, America R., Rincon-Granados, Karen L., Álvarez Bada J.R., Sato-Berru, Roberto Y.
Publicada:
30 abr 2023
Resumen:
Hybrid films for applications in organic electronics from NiFe2O4
nanoparticles (NPs) in poly(3,4 ethylene dioxythiophene),
poly(4-styrenesulfonate) (PEDOT:PSS), and poly(methyl methacrylate)
(PMMA) were fabricated by the spin-coating technique. The films were
characterized by infrared spectroscopy, atomic force microscopy,
scanning electron microscopy, and energy-dispersive spectroscopy to
subsequently determine their optical parameters. The electronic
transport of the hybrid films was determined in bulk heterojunction
devices. The presence of NiFe2O4 NPs reinforces mechanical properties
and increases transmittance in the hybrid films; the PEDOT:PSS-NiFe2O4
NPs film is the one that has a maximum stress of 28 MPa and a Knoop
hardness of 0.103, while the PMMA-NiFe2O4 NPs film has the highest
transmittance of (87%). The Tauc band gap is in the range of 3.78-3.9
eV, and the Urbach energy is in the range of 0.24-0.33 eV. Regarding
electrical behavior, the main effect is exerted by the matrix, although
the current carried is of the same order of magnitude for the two
devices: glass/ITO/polymer-NiFe2O4 NPs/Ag. NiFe2O4 NPs enhance the
mechanical, optical, and electrical behavior of the hybrid films and can
be used as semi-transparent anodes and as active layers.
Filiaciones:
Sánchez Vergara M.E.:
Faculty of Engineering, Universidad Anáhuac México, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Estado de México, Huixquilucan, 52786, Mexico
Agraz Rentería M.J.:
Faculty of Engineering, Universidad Anáhuac México, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Estado de México, Huixquilucan, 52786, Mexico
Vazquez-Olmos, America R.:
Institute of Applied Sciences and Technology, Universidad Nacional Autónoma de México, Circuito Exterior S/N, C.U., Coyoacán, Ciudad de México, 04510, Mexico
Univ Nacl Autonoma Mexico, Inst Appl Sci & Technol, Circuito Exterior S N,CU, Coyoacan 04510, Ciudad De Mexic, Mexico
Rincon-Granados, Karen L.:
Institute of Applied Sciences and Technology, Universidad Nacional Autónoma de México, Circuito Exterior S/N, C.U., Coyoacán, Ciudad de México, 04510, Mexico
Univ Nacl Autonoma Mexico, Inst Appl Sci & Technol, Circuito Exterior S N,CU, Coyoacan 04510, Ciudad De Mexic, Mexico
Álvarez Bada J.R.:
Faculty of Engineering, Universidad Anáhuac México, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Estado de México, Huixquilucan, 52786, Mexico
Sato-Berru, Roberto Y.:
Institute of Applied Sciences and Technology, Universidad Nacional Autónoma de México, Circuito Exterior S/N, C.U., Coyoacán, Ciudad de México, 04510, Mexico
Univ Nacl Autonoma Mexico, Inst Appl Sci & Technol, Circuito Exterior S N,CU, Coyoacan 04510, Ciudad De Mexic, Mexico
Univ Anahuac Mexico, Fac Engn, Ave Univ Anahuac 46,Col Lomas Anahuac, Huixquilucan 52786, Estado De Mexic, Mexico
gold, Gold
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