Preliminary results on the characterization of ZnS and ZnS:La nanophosphors synthetized by chemical route
Por:
Rodriguez-Lazcano, Y., Barrios-Salgado, E., Correcher, V, Perez-Orozco, J. P., Altuzar, P., Campos, J.
Publicada:
1 ene 2023
Resumen:
ZnS, a semiconductor material with a bandgap in the range of 3.6–3.8 eV, can be employed as a scintillator. We herein report on the preliminary results obtained from the thermoluminescence (TL) emission of ZnS and ZnS:La nanophosphors synthesized by chemical route. The samples were characterized by X-ray diffraction, scanning electron microscopy and TL. ZnS samples show a TL maximum centred at 87°C, while the ZnS:La sample shows two groups of components appearing between 70–160°C and 190–330°C. The dose–response displays a good linearity in the range of 10–17 Gy. © 2023, Indian Academy of Sciences.
Filiaciones:
Universidad Autónoma de Nayarit, Unidad Académica de Ciencias Básicas e Ingenierías, Ciudad de la Cultura “Amado Nervo” S/N, Tepic, C. P. 63155, Mexico
CIEMAT, Madrid, 28040, Spain
Departamento de Ingeniería Química y Bioquímica, Instituto Tecnológico de Zacatepec, Tecnológico Nacional de México, Calzada Tecnológico # 27, Col. Centro., Mexico City, C. P. 62780, Mexico
Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Temixco, Morelos, C.P. 62580, Mexico
Univ Autonoma Nayarit, Unidad Acad Ciencias Basicas & Ingn, Ciudad Cultura Amado Nervo S-N, Tepic 63155, Mexico
(Corresponding Author), Univ Autonoma Nayarit, Unidad Acad Ciencias Basicas & Ingn, Ciudad Cultura Amado Nervo S-N, Tepic 63155, Mexico
CIEMAT, Madrid 28040, Spain
Tecnol Nacl Mexico, Inst Tecnol Zacatepec, Dept Ingn Quim & Bioquim, Calzada Tecnol 27, Mexico City 62780, Mexico
Univ Nacl Autonoma Mexico, Inst Energias Renovables, Temixco 62580, Morelos, Mexico
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