Up and down conversion photoluminescence and structural properties from hafnium doped with different lanthanides and lithium


Por: Mariscal-Becerra, L., Velazquez-Aguilar, V. M., Flores-Jimenez, M. C., Acosta-Najarro, D., Torres-Zuniga, V., Vaquez-Arreguin, R., Huerta, E. F., Felix-Quintero, H., Falcony-Guajardo, C., Murrieta S H.

Publicada: 1 ene 2020
Resumen:
The structural and photoluminescent results of the lanthanum, erbium, ytterbium and lithium doped hafnium oxide phosphors; are presented. These powders were synthesized by the solvent evaporation technique, different percentages of doping of the lanthanides were carried out, obtaining monoclinic and cubic phases, also a cubic phase is present when doping lanthanides with 28% mol. Up-conversion (UC) and down-conversion (DC) luminescence spectra when excited with a 980 nm laser, three emission regions are presented; two in the visible (up-conversion) and one in the infrared (downshift), are observed. The green emission located at 528 nm, 543 nm and 559 nm; associated whit transitions of erbium ion (2H11/2 + 4S3/2) ? 4I15/2 and in the red emission located at 653 nm and 678 nm; associated whit transitions of erbium ion (4F9/2 + 4I9/2) ? 4I15/2. In 1532 nm, the infrared down conversion associated electronic transition 4I13/2 ? 4I15/2 of erbium ion. The luminescence emission intensity increase in green is 336 times and in red is 105 times when doping with lithium in comparison with samples without lithium co-doped. In the XRD diffractograms shown the monoclinic, cubic and mix of the phases in the phosphors; these are confirmed with the TEM diffraction patterns. The EDS result indicates the presence of HfO2, Er3+ and Yb3+, in the phosphorus; hafnium decreases due to the presence of ions lanthanides. XPS showed changes in energy values due to doping of lanthanides. The CIE diagram indicates that HfO2 doped phosphors have a variety of shades from red to yellow. © 2020 Elsevier B.V.

Filiaciones:
Facultad de Ciencias, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, Coyoacán, CDMX 04510, Mexico
Instituto de Física de la Universidad Nacional Autónoma de México, Circuito de la Investigación Científica, Ciudad Universitaria, Coyoacán, CDMX 04510, Mexico
Departamento de Física del Centro de Investigación y de Estudios Avanzados del IPN, Av. Instituto Politécnico Nacional 2508 San Pedro Zacatenco, Gustavo A, Madero, CDMX 07360, Mexico
Instituto Politécnico Nacional, Escuela Superior de Cómputo, Av. Juan de Dios Bátiz esq, Av. Miguel Othón de Mendizábal, Lindavista, Gustavo A, Madero, CDMX 07738, Mexico
Departamento de Física, Universidad Autónoma Metropolitana-Iztapalapa, P.O. Box 55-534CDMX 09340, Mexico
(Corresponding Author), Univ Nacl Autonoma Mexico, Fac Ciencias, Circuito Exterior S-N,Ciudad Univ, Mexico City 04510, DF, Mexico
Univ Nacl Autonoma Mexico, Fac Ciencias, Circuito Exterior S-n,Ciudad Univ, Mexico City 04510, DF, Mexico
Univ Nacl Autonoma Mexico, Inst Fis, Circuito Invest Cient, Ciudad Univ, Mexico City 04510, DF, Mexico
Ctr Invest & Estudios Avanzados IPN, Dept Fis, Av Inst Politecn Nacl 2508 San Pedro Zacatenco, Mexico City 07360, DF, Mexico
Inst Politecn Nacl, Escuela Super Comp, Av Juan Dios Batiz Esq,Av Miguel Othon Mendizabal, Mexico City 07738, DF, Mexico
Univ Autonoma Metropolitana Iztapalapa, Dept Fis, POB 55-534, Mexico City 09340, DF, Mexico
ISSN: 09258388
Editorial
Elsevier Sequoia SA, Lausanne, Switzerland, PO BOX 564, 1001 LAUSANNE, SWITZERLAND, Suiza
Tipo de documento: Article
Volumen: 846 Número:
Páginas:
WOS Id: 000567765900007

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