Interfacial strain defines the self-organization of epitaxial MoO2 flakes and porous films on sapphire: experiments and modelling
Por:
de Melo, O., Torres-Costa, V, Gonzalez, Y., Ruediger, A., de Melo, C., Ghanbaja, J., Horwat, D., Escobosa, A., Concepcion, O., Santana, G., Ramos, E.
Publicada:
1 ene 2020
Resumen:
The epitaxy of MoO2 on c-plane sapphire substrates is examined. A theoretical approach, based on density functional theory calculations of the strain energy, allowed to predict the preferred layer/substrate epitaxial relationships. To test the results of these calculations, MoO2/(0 0 1) Al2O3 heterostructures were grown using the chemically-driven isothermal close space vapour transport technique. At the early stages of the growth, two kinds of morphologies were obtained, using the same growth parameters: lying and standing flakes. The composition and morphology, as well as the layer/substrate epitaxial relationships were determined for both kind of morphologies. Experimental epitaxial relationships coincide with those predicted by DFT calculation as the most favourable ones in terms of strain energy. For thicker films, the standing flakes evolve to form an epitaxial porous layer composed by coalesced epitaxial flakes. The interfacial strain between the sapphire substrate and MoO2 enables a self-organization from nanometer to micron scales between separated or coalesced flakes, depending on deposition condition. © 2020 Elsevier B.V.
Filiaciones:
de Melo, O.:
Physics Faculty, University of Havana, La Habana, 10400, Cuba
Departamento de Física Aplicada y Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, Cantoblanco, Madrid, 28049, Spain
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Cd. Universitaria, A.P. 70-360, Coyoacán 04510, México D. F., Mexico
Univ Havana, Phys Fac, Havana 10400, Cuba
Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain
Univ Autonoma Madrid, Ctr Microanal Mat, E-28049 Madrid, Spain
Univ Nacl Autonoma Mexico, Inst Invest Mat, AP 70-360, Mexico City 04510, DF, Mexico
Torres-Costa, V:
Departamento de Física Aplicada y Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, Cantoblanco, Madrid, 28049, Spain
Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain
Univ Autonoma Madrid, Ctr Microanal Mat, E-28049 Madrid, Spain
Gonzalez, Y.:
Departamento de Física Aplicada y Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, Cantoblanco, Madrid, 28049, Spain
Institut National de la recherche scientifique, Centre Énergie, Matériaux, Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada
Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain
Univ Autonoma Madrid, Ctr Microanal Mat, E-28049 Madrid, Spain
Inst Natl Rech Sci, Ctr Energie Mat Telecommun, 1650 Blvd Lionel Boulet, Varennes, PQ J3X 1S2, Canada
Ruediger, A.:
Institut National de la recherche scientifique, Centre Énergie, Matériaux, Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada
Inst Natl Rech Sci, Ctr Energie Mat Telecommun, 1650 Blvd Lionel Boulet, Varennes, PQ J3X 1S2, Canada
de Melo, C.:
Institut Jean Lamour, Université de Lorraine, UMR 7198, Nancy, F-54000, France
Univ Lorraine, Inst Jean Lamour, UMR 7198, F-54000 Nancy, France
Ghanbaja, J.:
Institut Jean Lamour, Université de Lorraine, UMR 7198, Nancy, F-54000, France
Univ Lorraine, Inst Jean Lamour, UMR 7198, F-54000 Nancy, France
Horwat, D.:
Institut Jean Lamour, Université de Lorraine, UMR 7198, Nancy, F-54000, France
Univ Lorraine, Inst Jean Lamour, UMR 7198, F-54000 Nancy, France
Escobosa, A.:
Sección de Electrónica del Estado Sólido, Departamento de Ingeniería Eléctrica, CINVESTAV, IPN, Mexico
IPN, Dept Ingn Elect, CINVESTAV, Secc Elect Estado Solido, Mexico City, DF, Mexico
Concepcion, O.:
Departamento de Física Aplicada y Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, Cantoblanco, Madrid, 28049, Spain
Sección de Electrónica del Estado Sólido, Departamento de Ingeniería Eléctrica, CINVESTAV, IPN, Mexico
Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain
Univ Autonoma Madrid, Ctr Microanal Mat, E-28049 Madrid, Spain
IPN, Dept Ingn Elect, CINVESTAV, Secc Elect Estado Solido, Mexico City, DF, Mexico
Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
Santana, G.:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Cd. Universitaria, A.P. 70-360, Coyoacán 04510, México D. F., Mexico
Univ Nacl Autonoma Mexico, Inst Invest Mat, AP 70-360, Mexico City 04510, DF, Mexico
Ramos, E.:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Cd. Universitaria, A.P. 70-360, Coyoacán 04510, México D. F., Mexico
Univ Nacl Autonoma Mexico, Inst Invest Mat, AP 70-360, Mexico City 04510, DF, Mexico
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