STRUCTURAL CHARACTERIZATION OF THE LAYERED COMPOUND Ag2SnSe3 FROM SCANNING AND TRANSMISSION ELECTRON MICROSCOPY AND SYNCHROTRON POWDER DIFFRACTION
Por:
Avila-Godoy, R., Acosta-Najarro, D., Camargo-E, G., Magana-Zavala, C., Nieves, L., Paredes-Dugarte, S., Hidalgo-Prada, B.
Publicada:
1 ene 2018
Resumen:
In this paper, a study of structural characterization of the ternary
semiconductor Ag2SnSe3 is presented. The experimental work was performed
using Scanning Electron Microscopy (SEM), Selected Area Electron
Diffraction (SAED) patterns, High Resolution Electron Microscopy (HREM),
Annular Dark field imaging (ADF), and powder synchrotron X-ray
Diffraction techniques. It was found that the semiconductor compound
Ag2SnSe3 crystallizes in the monoclinic space group P2/m with cell
parameters a = 7.977 angstrom, b = 7.912 angstrom, c = 13.023 angstrom,
beta = 101.734 degrees, V = 804.79 angstrom(3).
Filiaciones:
Univ Los Andes, Lab Anal Quim Estruct Mat, Merida 5101, Venezuela
Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 04510, DF, Mexico
Univ Los Andes, Ctr Semicond, Merida 5101, Venezuela
Univ Oriente, Lab Caracterizac Mat, Inst Invest Biomed & Ciencias Aplicadas, Cumana, Venezuela
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