Structural and Raman studies of Ga2O3 obtained on GaAs substrate
Por:
Galván C., Galván M., Arias-Cerón J.S., López-Luna E., Vilchis H., Sánchez-R V.M.
Publicada:
1 ene 2016
Resumen:
Ga2O3 were synthesized by controlled thermal oxidation of GaAs substrates at atmospheric pressure. The crystalline structure and vibrational modes were studied as a function of growth temperature within a range of 750-950 °C. Samples grown in the range of 750-850 °C present nanostructured surface and the samples obtained at higher temperature are oriented to the (004) ?-phase. Crystalline structure was confirmed by X-ray diffraction, and Raman scattering studies. The evolution of the surface morphology was analyzed by atomic force microscopy, and scanning electron microscopy. © 2015 Elsevier Ltd.
Filiaciones:
Galván C.:
Coordination for the Innovation and Application of Science and Technology-UASLP, Sierra Leona # 550 Lomas 2da Sección, San Luis Potosí, Mexico
Galván M.:
Solid State Electronics Section, Department of Electrical Engineering - CINVESTAV-I.P.N., Av. Instituto Politécnico Nacional, 2508, San Pedro Zacatenco, México D.F., Mexico
Arias-Cerón J.S.:
Solid State Electronics Section, Department of Electrical Engineering - CINVESTAV-I.P.N., Av. Instituto Politécnico Nacional, 2508, San Pedro Zacatenco, México D.F., Mexico
López-Luna E.:
Coordination for the Innovation and Application of Science and Technology-UASLP, Sierra Leona # 550 Lomas 2da Sección, San Luis Potosí, Mexico
Vilchis H.:
Coordination for the Innovation and Application of Science and Technology-UASLP, Sierra Leona # 550 Lomas 2da Sección, San Luis Potosí, Mexico
Sánchez-R V.M.:
Solid State Electronics Section, Department of Electrical Engineering - CINVESTAV-I.P.N., Av. Instituto Politécnico Nacional, 2508, San Pedro Zacatenco, México D.F., Mexico
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