Preferential orientation in bismuth thin films as a function of growth conditions
Por:
Rodil S.E., Garcia-Zarco O., Camps E., Estrada H., Lejeune M., Bourja L., Zeinert A.
Publicada:
31 ago 2017
Resumen:
Bismuth thin films are known to exhibit interesting properties that can
be explored for new applications such as optical or electrical sensors
and thermoelectric devices. Due to the large anisotropy of the
electronic band structure of Bi, its conductivity and optical functions
are largely dependent on the preferred orientation obtained for the
polycrystalline thin films, which are determined by the deposition
system and the parameters. In this study we report on the growth of
bismuth thin films deposited by various deposition methods, all of them
starting from the vapor phase but with different energies associated to
the impinging species: thermal and electron beam evaporation, direct and
alternating current magnetron sputtering, and pulsed laser evaporation.
It is shown that the texture developed in Bi thin films follows a
competitive growth texture in which the crystallographic planes with
lower surface energy are favored and this process is dominant unless
enough energy is supplied either by substrate heating or high energy
bombardment. (C) 2017 Elsevier B.V. All rights reserved.
Filiaciones:
Rodil S.E.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, CU, Circuito Exterior S-N, Mexico City 04510, DF, Mexico
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Mexico, Circuito Exterior s/n, CU, México D.F., 04510, Mexico
Garcia-Zarco O.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, CU, Circuito Exterior S-N, Mexico City 04510, DF, Mexico
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Mexico, Circuito Exterior s/n, CU, México D.F., 04510, Mexico
Camps E.:
Inst Nacl Invest Nucl, Dept Fis, Apartado Postal 18-1027, Mexico City 11801, DF, Mexico
Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, México D.F., 11801, Mexico
Estrada H.:
Ctr Ingn & Desarrollo Ind, Av Playa Pie de la Cuesta 702, Santiago De Queretaro 7612, Qro, Mexico
Centro de Ingeniería y Desarrollo Industrial, Av. Playa Pie de la Cuesta No. 702, Desarrollo San Pablo, Santiago de Querétaro, Qro 7612, Mexico
Lejeune M.:
Univ Picardie Jules Verne, Lab Phys Mat Condensee, 33 Rue St Leu, F-80039 Amiens, France
Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, 33 rue St. Leu, Amiens, 80039, France
Bourja L.:
Univ Picardie Jules Verne, Lab Phys Mat Condensee, 33 Rue St Leu, F-80039 Amiens, France
Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, 33 rue St. Leu, Amiens, 80039, France
Zeinert A.:
Univ Picardie Jules Verne, Lab Phys Mat Condensee, 33 Rue St Leu, F-80039 Amiens, France
Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, 33 rue St. Leu, Amiens, 80039, France
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