Interrelation Between Structural and Electrical Properties in RuSr2GdCu2O8 +/- Z Prepared Under Different Annealing Conditions


Por: Garcia-Vazquez, Valentin, Abatal, Mohamed, Oubrame, Outmane, Alfonzo, Ismeli, Alazki, Hussain, Flores-Flores, Jose O., Quiroz, Adolfo, Flores-Garcia, Jose C., Gonzalez, Gonzalo

Publicada: 1 jun 2017
Resumen:
The effect of annealing in flowing oxygen on the structural and electrical properties of the rutheno-cuprate RuSr2GdCu2O8 +/- z (Ru-1212) was investigated. The solid-state reaction method was used to synthesize the Ru-1212 compound at ambient pressure using temperatures between 960 and 1000 degrees C in air. Pure-phase samples were obtained and then annealed in flowing oxygen at 1060 degrees C for 0, 48, 72, or 168 hrs. The structural data of each sample were refined by the Rietveld method. Cell parameters, a and c, as well as the Cu-O(1) interatomic distances increase as the annealing time in flowing oxygen increases. The temperature-dependent electrical resistance of the sample that was not annealed in flowing oxygen shows semiconducting behavior. In contrast, samples annealed in flowing oxygen show superconducting transitions. All these results indicate that the structural and electrical properties of the Ru-1212 compound are related.

Filiaciones:
Garcia-Vazquez, Valentin:
 Benemerita Univ Autonoma Puebla, Inst Fis Luis Rivera Terrazas, Puebla 72570, Mexico

Abatal, Mohamed:
 Univ Autonoma Carmen, Fac Ingn, Ciudad Del Carmen 24180, Mexico

Oubrame, Outmane:
 Univ Autonoma Estado Morelos, Fac Ciencias Quim & Ingn, Cuernavaca 62209, Morelos, Mexico

Alfonzo, Ismeli:
 Univ Nacl Autonoma Mexico, Inst Invest Mat, Unidad Morelia, Morelia 58190, Michoacan, Mexico

Alazki, Hussain:
 Univ Autonoma Carmen, Fac Ingn, Ciudad Del Carmen 24180, Mexico

Flores-Flores, Jose O.:
 Univ Nacl Autonoma Mexico, Ctr Ciencias Aplicadas & Desarrollo Tecnol, Mexico City 04510, DF, Mexico

Quiroz, Adolfo:
 Univ Autonoma Carmen, Fac Ingn, Ciudad Del Carmen 24180, Mexico

Flores-Garcia, Jose C.:
 Benemerita Univ Autonoma Puebla, Fac Ciencias Elect, Puebla 72570, Mexico

Gonzalez, Gonzalo:
 Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
ISSN: 10518223
Editorial
Institute of Electrical and Electronics Engineers Inc., 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA, Estados Unidos America
Tipo de documento: Article
Volumen: 27 Número: 4
Páginas:
WOS Id: 000395879700001

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