Thickness dependent growth of low temperature atomic layer deposited zinc oxide films
Por:
Morltiel-Gonzalez, Z., Castelo-Gonzalez, O. A., Aguilar-Gama, M. T., Ramirez-Morales, E., Hu, H.
Publicada:
5 mar 2017
Resumen:
Zinc oxide films are promising to improve the performance of electronic
devices, including those based on organic materials. However, the
dependence of the ZnO properties on the preparation conditions
represents a challenge to obtain homogeneous thin films that satisfy
specific applications. Here, we prepared ZnO films of a wide range of
thicknesses by atomic layer deposition (ALD) at relatively low
temperatures, 150 and 175 degrees C. From the results of X-ray
photoelectron spectroscopy, X-ray diffraction and Spectroscopic
Ellipsometry it is concluded that the polycrystalline structure of the
wurtzite is the main phase of the ALD samples, with OH groups on their
surface. Ellipsometry revealed that the temperature and the deposition
cycles have a strong effect on the films roughness. Scanning electron
micrographs evidenced such effect, through the large pyramids developed
at the surface of the films. It is concluded that crystalline ZnO thin
films within a broad range of thickness and roughness can be obtained
for optic or optoelectronic applications. (C) 2016 Elsevier Ltd. All
rights reserved.
Filiaciones:
Morltiel-Gonzalez, Z.:
Univ Nacl Autonoma Mexico, Inst Energias Renovables, Temixco 62580, Morelos, Mexico
CONACYT Ctr Invest Mat Avanzados SC, Unidad Monterrey, PIIT, Apodaca 66628, Nuevo Leon, Mexico
Castelo-Gonzalez, O. A.:
Univ Nacl Autonoma Mexico, Inst Energias Renovables, Temixco 62580, Morelos, Mexico
Aguilar-Gama, M. T.:
Univ Nacl Autonoma Mexico, Inst Energias Renovables, Temixco 62580, Morelos, Mexico
Ramirez-Morales, E.:
Univ Nacl Autonoma Mexico, Inst Energias Renovables, Temixco 62580, Morelos, Mexico
Hu, H.:
Univ Nacl Autonoma Mexico, Inst Energias Renovables, Temixco 62580, Morelos, Mexico
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