Temperature dependence of photoluminescence from localized states of silicon nanocrystals in silicon-implanted quartz
Por:
Duong P.H., Lavallard P., Oliver A., Itoh T.
Publicada:
1 ene 2003
Resumen:
Silicon nanocrystals were produced in fused quartz by using very high Si-ion implantation energy (2 MeV); hence the penetration depth of 2 µm is 20 times larger than those of other works. We have measured carefully the photoluminescence (PL) intensity in the temperature range between 4 and 300 K. By using a model taking account of a process of radiative recombination from the triplet and singlet states and two non-radiative decay processes, a tunnelling process and a thermal activation process, we obtained a good agreement between the theoretical curve and the experimental data. This calculation is the first attempt to explain quantitatively the temperature dependence of the PL intensity of the silicon nanocrystals. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Filiaciones:
Duong P.H.:
Institute of Materials Science, NCST, Hoang Quoc Viet, Cau giay, Hanoi, Viet Nam
Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan
Lavallard P.:
Groupe de Physique des Solides, Université Paris 6 et 7, 2 place Jussieu, 75005 Paris, France
Oliver A.:
Instituto de Física, Universidad Nacional Autónoma de México, Mexico
Itoh T.:
Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan
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