Morphological effects in the quantum yield of cesium iodide
Por:
Almeida J., Barbo F., Bertolo M., Bianco A., Braem A., Cerasari S., Coluzza C., dell'Orto T., Fontana S., Margaritondo G., Nappi E., Paic G., Piuz F., Sanjines R., Scognetti T., Sgobba S.
Publicada:
1 ene 1995
Resumen:
We demonstrated that polycrystalline cesium iodide (CsI) on large area Ni Au coated printed board provides a quantum efficiency (QE) higher by a factor of 2 than the films deposited on the standard Cu Au printed circuits. This is the most important result of the present systematic study of the QE lateral inhomogeneity for CsI on different substrates. We found a strong correlation between the QE lateral variation and the morphological homogeneity of the films. The QE was measured by UV photoelectron emission microscopy and spatially resolved X-ray photoemission, and the morphology studies were performed by secondary electron microscopy, X-ray diffraction and scanning tunneling microscopy. © 1995.
Filiaciones:
Almeida J.:
DP-IPA, EPFL, PH-Ecublens, CH-1015 Lausanne, Switzerland
Barbo F.:
Sincrotrone Trieste SpA, Padriciano 99, 34012 Trieste, Italy
Bertolo M.:
Sincrotrone Trieste SpA, Padriciano 99, 34012 Trieste, Italy
Bianco A.:
Sincrotrone Trieste SpA, Padriciano 99, 34012 Trieste, Italy
Braem A.:
Cern/Div. PPE, CH-1211 Geneva 23, Switzerland
Cerasari S.:
Sincrotrone Trieste SpA, Padriciano 99, 34012 Trieste, Italy
Coluzza C.:
DP-IPA, EPFL, PH-Ecublens, CH-1015 Lausanne, Switzerland
dell'Orto T.:
DP-IPA, EPFL, PH-Ecublens, CH-1015 Lausanne, Switzerland
Fontana S.:
Sincrotrone Trieste SpA, Padriciano 99, 34012 Trieste, Italy
Margaritondo G.:
DP-IPA, EPFL, PH-Ecublens, CH-1015 Lausanne, Switzerland
Nappi E.:
INFN-Sez. di Bari, Italy
Paic G.:
Cern/Div. PPE, CH-1211 Geneva 23, Switzerland
Piuz F.:
Cern/Div. PPE, CH-1211 Geneva 23, Switzerland
Sanjines R.:
DP-IPA, EPFL, PH-Ecublens, CH-1015 Lausanne, Switzerland
Scognetti T.:
INFN-Sez. di Bari, Italy
Sgobba S.:
Cern/Div. PPE, CH-1211 Geneva 23, Switzerland
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