Characterization of chemically etched indium phosphide surfaces with light scattering
Por:
Rovira-Laparra M., Bruce N.C., Rodriguez-Herrera O.G., Bañuelos-Muñetón J.G., Basiuk E.V., Saniger Blesa J.M.
Publicada:
1 ene 2007
Resumen:
Scattering of light from chemically etched InP surfaces is studied in the present paper. A model is developed to describe the randomly rough surfaces produced by chemical etching and this model is used in a numerical simulation using the Kirchhoff approximation to calculate the scattered intensity distribution from the surfaces. Comparisons between the numerical results and experimental measurements for an incident wavelength of 633 nm show good agreement. Numerical simulation results are presented to show the variation of the scattered intensity distribution for surfaces with different times of chemical etching. These results are useful for characterization or control of this type of surface.
Filiaciones:
Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior, Ciudad Universitaria, A.P. 70-186, Mexico
Applied Optics, Department of Experimental Physics, National University of Ireland, Galway, University Road, Galway, Ireland
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