Characterization of rhenium nitride films produced by reactive pulsed laser deposition
Por:
Soto G., Rosas A., Farias M.H., De la Cruz W., Diaz J.A.
Publicada:
1 ene 2007
Resumen:
Rhenium nitride (ReNx) films were grown on (100)-Si substrates by the reactive pulsed laser deposition (PLD) method using a high purity Re rod in an environment of molecular nitrogen. The resulting films are characterized by several techniques, which include in situ Auger electron spectroscopy, X-ray photoelectron spectroscopy and ex situ X-ray diffraction, scanning electron and atomic force microscopy. Additionally, the four-probe method is used to determine the sheet resistance of deposited layers. Results show that films with N/Re ratios (x) lower than 1.3 are very good conductors. In fact, the resistivity of ReN films for 0.2 < x < 1.3 is of the order of 5% of that of Re films, while at x = 1.3 there is an abrupt increment in resistivity, resulting in dielectric films for 1.3 < x < 1.35. These results differ from the prior understanding that in transition metals, resistivity should increase with nitrogen incorporation. © 2006 Elsevier Inc. All rights reserved.
Filiaciones:
Centro de Ciencias de la Materia Condensada, Universidad Nacional Autónoma de México, Ap. Postal 2681, 22800 Ensenada B. C., Mexico
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