Growth and characterization of GaAs by metalorganic chemical vapor deposition using triethylgallium and solid arsenic
Por:
Esparza A., Galván M., Castillo R., Sánchez M., Peña Sierra R., Escobosa A.
Publicada:
1 ene 2001
Resumen:
GaAs-low compensated layers were grown by using an atmospheric MOCVD system. Solid arsenic and triethylgallium (TEG) were used as precursors. The layers exhibit an electron mobility greater than 30,000 cm2/V-sec at 77K for best growing conditions. This is the highest value reported until now for MOCVD GaAs grown by using non-arsine based alternative arsenic sources. The resulting layers were n-type with a minimum electron concentration of 1015cm3. The DLTS studies shown the EL2 electron level as the dominant trap with a concentration of 1013cm-3.
Filiaciones:
Esparza A.:
CINVESTA V-IPN, Departamento de Ingenieria Electrica, Secc. de Electron. Del Estado Solido, Apdo. Postal 14-740, 0700 México D.F., Mexico
Galván M.:
CINVESTA V-IPN, Departamento de Ingenieria Electrica, Secc. de Electron. Del Estado Solido, Apdo. Postal 14-740, 0700 México D.F., Mexico
Castillo R.:
CINVESTA V-IPN, Departamento de Ingenieria Electrica, Secc. de Electron. Del Estado Solido, Apdo. Postal 14-740, 0700 México D.F., Mexico
Sánchez M.:
CINVESTA V-IPN, Departamento de Ingenieria Electrica, Secc. de Electron. Del Estado Solido, Apdo. Postal 14-740, 0700 México D.F., Mexico
Peña Sierra R.:
CINVESTA V-IPN, Departamento de Ingenieria Electrica, Secc. de Electron. Del Estado Solido, Apdo. Postal 14-740, 0700 México D.F., Mexico
Escobosa A.:
CINVESTA V-IPN, Departamento de Ingenieria Electrica, Secc. de Electron. Del Estado Solido, Apdo. Postal 14-740, 0700 México D.F., Mexico
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