Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source
Por:
Rodil S., Morrison N.A., Milne W.I., Robertson J., Stolojan V., Jayawardane D.N.
Publicada:
1 ene 2000
Resumen:
Hydrogenated amorphous carbon nitride (a-C:N:H) has been synthesized using a high plasma density electron cyclotron wave resonance (ECWR) technique using N2 and C2H2 as source gases, at different ratios and a fixed ion energy (80 eV). The composition, structure and bonding state of the films were investigated and related to their optical and electrical properties. The nitrogen content in the film rises rapidly until the N2/C2H2 gas ratio reaches 2 and then increases more gradually, while the deposition rate decreases steeply, placing an upper limit for the nitrogen incorporation at 30 at%. For nitrogen contents above 20 at%, the band gap and sp3-bonded carbon fraction decrease from 1.7 to 1.1 eV and approximately 65 to 40%, respectively. Films with higher nitrogen content are less dense than the original hydrogenated tetrahedral amorphous carbon (ta-C:H) film but, because they have a relatively high band gap (1.1 eV), high resistivity (109 ? cm) and moderate sp3-bonded carbon fraction (40%), they should be classed as polymeric in nature.
Filiaciones:
Engineering Department, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, United Kingdom
Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom
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