The preparation, characterization and tribological properties of TA-C : H deposited using an electron cyclotron wave resonance plasma beam source
Por:
Morrison N.A., Muhl S., Rodil S.E., Ferrari A.C., Nesládek M., Milne W.I., Robertson J.
Publicada:
1 ene 1999
Resumen:
A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 Å/min over a 4? diameter and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its sp3 content, mass density, intrinsic stress, hydrogen content, C-H bonding, Raman spectra, optical gap, surface roughness and friction coefficient. The results obtained indicated that the film properties were maximized at an ion energy of approximately 167 eV, corresponding to an energy per daughter carbon ion of 76 eV. The relationship between the incident ion energy and film densification was also explained in terms of the subsurface implantation of carbon ions into the growing film.
Filiaciones:
Morrison N.A.:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, United Kingdom
Muhl S.:
Institute de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Aptd. Postal 70-360, Coyoacan, Mexico
Rodil S.E.:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, United Kingdom
Ferrari A.C.:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, United Kingdom
Nesládek M.:
Institute for Materials Research, Universitaire Campus, Limburgs Universitair Centrum, Wetenschapspark, 1, B-3590 Diepenbeek, Belgium
Milne W.I.:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, United Kingdom
Robertson J.:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, United Kingdom
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