Preparation and characterization of carbon nitride films
Por:
Muhl Stephen, Gaona-Couto Adriana, Mendez Juan Manuel, Rodil Sandra, Gonzalez Gonzalo, Merkulov Alexander, Asomoza Rene
Publicada:
1 ene 1998
Resumen:
Carbon nitride (CN) films were prepared by plasma decomposition of CH4 and N2 gas mixtures within a hollow graphite cathode. Langmuir probe measurements of the plasma in the substrate region showed that the electron temperature was of the order 10 eV with a plasma density approximately 1010 cm-3. The deposit grew preferentially on scratch defects on the silicon substrate surface in the form of cone shaped columns. Characterization of the samples was performed using profilometry, Fourier transform infrared spectroscopy, energy dispersive X ray analysis, secondary ion mass spectrometry, electron diffraction. Annealing studies revealed that the material was stable to at least 700 °C under vacuum and 500 °C in air.
Filiaciones:
Muhl Stephen:
Universidad Nacional Autonoma de, Mexico, Mexico, Mexico
Gaona-Couto Adriana:
Universidad Nacional Autonoma de, Mexico, Mexico, Mexico
Rodil Sandra:
Universidad Nacional Autonoma de, Mexico, Mexico, Mexico
Gonzalez Gonzalo:
Universidad Nacional Autonoma de, Mexico, Mexico, Mexico
Merkulov Alexander:
Universidad Nacional Autonoma de, Mexico, Mexico, Mexico
Asomoza Rene:
Universidad Nacional Autonoma de, Mexico, Mexico, Mexico
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