High rate deposition of Ta-C:H using an electron cyclotron wave resonance plasma source
Por:
Morrison N.A., Muhl S., Rodil S.E., Milne W.I., Robertson J., Weiler M., Wang P.Z., Hutchings I., Stolojan V., Brown L.M.
Publicada:
1 ene 1997
Resumen:
A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 angstrom/min and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its bonding, stress and friction coefficient. The results indicated that the ta-C:H produced using this source fulfills the necessary requirements for applications requiring enhanced tribological performance.
Filiaciones:
Morrison N.A.:
Univ of Cambridge, Cambridge, United Kingdom
Muhl S.:
Univ of Cambridge, Cambridge, United Kingdom
Rodil S.E.:
Univ of Cambridge, Cambridge, United Kingdom
Milne W.I.:
Univ of Cambridge, Cambridge, United Kingdom
Robertson J.:
Univ of Cambridge, Cambridge, United Kingdom
Weiler M.:
Univ of Cambridge, Cambridge, United Kingdom
Wang P.Z.:
Univ of Cambridge, Cambridge, United Kingdom
Hutchings I.:
Univ of Cambridge, Cambridge, United Kingdom
Stolojan V.:
Univ of Cambridge, Cambridge, United Kingdom
Brown L.M.:
Univ of Cambridge, Cambridge, United Kingdom
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