Production and characterisation of carbon nitride thin films produced by a graphite hollow cathode system


Por: Muhl S., Gaona-Couto A., Méndez J.M., Rodil S., Gonzalez G., Merkulov A., Asomoza R.

Publicada: 1 ene 1997
Resumen:
Carbon nitride thin films have been prepared by plasma enhanced chemical vapour deposition of CH4 and N2 gas mixtures, by chemical transport from a hollow graphite cathode. The deposits prepared on pieces of single crystal silicon substrates were characterised using FTIR, Raman, SEM, EDX, SIMS, X-ray and electron diffraction. Single, double and triple carbon nitrogen bonds were detected in the FTIR spectra; the relative intensities of the associated bands being a function of the plasma power and substrate bias. Elemental analysis of the deposit showed that the nitrogen content was ?57 at%. A polycrystalline deposit identified as hexagonal ?-C3N4 was obtained at low substrate temperatures. The deposit was found to grow preferentially on scratch defects on the silicon substrate surface and was stable upon annealing under vacuum up to 700°C. © 1997 Elsevier Science S.A.

Filiaciones:
Muhl S.:
 Inst. de Invest. en Materiales, Univ. Nac. Autonoma de México, Apartado Postal 70-360, Coyoacan, México, D.F. 04510, Mexico

Gaona-Couto A.:
 Inst. de Invest. en Materiales, Univ. Nac. Autonoma de México, Apartado Postal 70-360, Coyoacan, México, D.F. 04510, Mexico

Méndez J.M.:
 Inst. de Invest. en Materiales, Univ. Nac. Autonoma de México, Apartado Postal 70-360, Coyoacan, México, D.F. 04510, Mexico

Rodil S.:
 Inst. de Invest. en Materiales, Univ. Nac. Autonoma de México, Apartado Postal 70-360, Coyoacan, México, D.F. 04510, Mexico

Gonzalez G.:
 Inst. de Invest. en Materiales, Univ. Nac. Autonoma de México, Apartado Postal 70-360, Coyoacan, México, D.F. 04510, Mexico

Merkulov A.:
 Ctro. de Invest. y Estud. Avanzados, Inst. Politécnico Nacional, Apartado Postal 14-470, México D.F. 07000, Mexico

Asomoza R.:
 Ctro. de Invest. y Estud. Avanzados, Inst. Politécnico Nacional, Apartado Postal 14-470, México D.F. 07000, Mexico
ISSN: 00406090
Editorial
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND, Suiza
Tipo de documento: Article
Volumen: 308-309 Número: 1-4
Páginas: 228-232

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