Inherent photoluminescence Stokes shift in GaAs
Por:
Ullrich B., Singh A.K., Barik P., Xi H., Bhowmick M.
Publicada:
1 jun 2015
Categoría:
Atomic and Molecular Physics, and Optics
Resumen:
The intrinsic photoluminescence Stokes shift, i.e., the energy difference between optical band gap and emission peak, of 350 µm thick semi-insulating GaAs wafers is found to be 4 meV at room temperature. The result is based on the determination of the optical bulk band gap from the transmission trend via modified Urbach rule whose result is confirmed with the transmission derivative method. The findings reveal the detailed balance of the optically evoked transitions and disclose the intrinsic link between Stokes shift and the Urbach tail slope parameter. © 2015 Optical Society of America.
Filiaciones:
Ullrich B.:
Univ Nacl Autonoma Mexico, Inst Ciencias Fis, Cuernavaca 62210, Morelos, Mexico
Singh A.K.:
Univ Nacl Autonoma Mexico, Inst Ciencias Fis, Cuernavaca 62210, Morelos, Mexico
Barik P.:
Univ Nacl Autonoma Mexico, Inst Ciencias Fis, Cuernavaca 62210, Morelos, Mexico
Xi H.:
Department of Physics and Astronomy, Bowling Green State University, Bowling Green, OH 43403-0209, United States
Bhowmick M.:
School of Science and Technology, Nazarbayev University, Astana, 010000, Kazakhstan
All Open Access; Green
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