Large-Area Si-Doped Graphene: Controllable Synthesis and Enhanced Molecular Sensing


Por: Lv R., Dos Santos M.C., Antonelli C., Feng S., Fujisawa K., Berkdemir A., Cruz-Silva, R, Elias, AL, Perea-Lopez, N, Lopez-Urias, F, Terrones, H, Terrones, M

Publicada: 3 dic 2014
Resumen:
Large-area Si-doped graphene (SiG) is controllably synthesized for the first time. A much-enhanced molecular-sensing performance is achieved when SiG is used as a probing surface. This will open up opportunities for developing high-performance sensors that are able to detect trace amounts of organic and fluorescent molecules. Furthermore, many fascinating properties predicted by theoretical calculations can be tested based on the as-synthesized SiG. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Filiaciones:
Lv R.:
 Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China

Dos Santos M.C.:
 Instituto de Física, Universidade de São Paulo, São Paulo, SP 05508-090, Brazil

Antonelli C.:
 Department of Materials Science and Engineering, Universidad Carlos III de Madrid, Madrid, Spain

Feng S.:
 Department of Physics and Center for 2-Dimensional and Layered Materials, Pennsylvania State University, University Park, PA 16802, United States

Fujisawa K.:
 Department of Physics and Center for 2-Dimensional and Layered Materials, Pennsylvania State University, University Park, PA 16802, United States

Berkdemir A.:
 Department of Physics and Center for 2-Dimensional and Layered Materials, Pennsylvania State University, University Park, PA 16802, United States

Institute of Carbon Science and Technology, Shinshu University, Wakasato 4-17-1, Nagano, 380-853, Japan
Department of Chemistry, Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, United States
Advanced Materials Department, IPICYT, Camino a la Presa San José 2055 Col. Lomas 4a sección , San Luis Potos' S.L.P., 7821678216, Mexico
Department of Physics, Advanced Physics and Astronomy, Rensselaer Polytechnic Institute, 100 Eighth Street, Troy, NY 12180, United States
ISSN: 09359648
Editorial
Wiley-VCH Verlag Berlin GmbH, Germany, PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY, Alemania
Tipo de documento: Article
Volumen: 26 Número: 45
Páginas: 7593-7599
WOS Id: 000345969400009
ID de PubMed: 25355604

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