Stabilization of the delta-phase in Bi2O3 thin films
Por:
Gomez C.L., Depablos-Rivera O., Medina J.C., Silva-Bermudez P., Muhl S., Zeinert A., Rodil S.E.
Publicada:
1 feb 2014
Resumen:
In this paper, we report the stabilization of the d-phase of Bi 2O3 thin films from room temperature (RT) to 500 C by the addition of tantalum ions. The d-Bi2O3 phase is the material presenting the highest ionic conductivity; as bulk it is stable in a reduced temperature range from 730 to 825°C, while the a-phase is the RT stable phase. However, when produced by atomic aggregation methods as a nanometric thin film, the delta-phase can be maintained at atmospheric conditions and it actually reverts to the alpha-phase only after thermal annealing, such transformation usually occurs around 250-350 Cby passing through the ß-phase. In this work, we report that tantalum addition during the deposition of the Bi2O3 films by magnetron sputtering allows the maintenance of the delta phase up to 500°C upon thermal annealing in air. © 2013 Elsevier B.V. All rights reserved.
Filiaciones:
Gomez C.L.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
Depablos-Rivera O.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
Medina J.C.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
Silva-Bermudez P.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
Muhl S.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
Zeinert A.:
Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, France
Rodil S.E.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
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