Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering
Por:
Oezer D., Ramírez G., Rodil S.E., Sanjinés R.
Publicada:
1 dic 2012
Categoría:
Physics and Astronomy (miscellaneous)
Resumen:
The electrical and optical properties of TaxSiyNz thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correlation to the film microstructure. Three sets of fcc-TaxSiyNz thin films were prepared: sub-stoichiometric TaxSiyN0.44, nearly stoichiometric TaxSiyN0.5, and over-stoichiometric TaxSiyN0.56. The optical properties were investigated by near-normal-incidence reflectivity and ellipsometric measurements in the optical energy range from 0.375 eV to 6.8 eV, while the d.c. electrical resistivity was measured in the van der Pauw configuration from 20 K to 300 K. The optical and electrical measurements were interpreted using the standard Drude-Lorentz model and the so-called grain boundary scattering model, respectively. The electronic properties were closely correlated with the compositional and structural modifications of the TaxSiyNz films du
Filiaciones:
Oezer D.:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Condensed Matter Physics (ICMP), CH-1015 Lausanne, Switzerland
Ramírez G.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, CU, Mexico City 04510, DF, Mexico
Instituto de investigaciones en materiales, Universidad Nacional Autónoma de México, Circuito Exterior s/n, CU, México D.F. 04510, Mexico
Rodil S.E.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, CU, Mexico City 04510, DF, Mexico
Instituto de investigaciones en materiales, Universidad Nacional Autónoma de México, Circuito Exterior s/n, CU, México D.F. 04510, Mexico
Sanjinés R.:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Condensed Matter Physics (ICMP), CH-1015 Lausanne, Switzerland
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