Synthesis and characterization of NiPcTSTNa(L) thin films
Por:
Sánchez-Vergara M.E., García-Montalvo V., Santoyo-Salazar J., Fragoso-Soriano R.J., Jiménez-Sandoval O.
Publicada:
1 oct 2012
Resumen:
NiPcTSTNa(L) [L = ethylenediamine (EDA); 1,4-diaminobutane (BDA); and 2,6-diamineanthraquinone (AqDA)] thin films were deposited by thermal evaporation. Their surface morphology was studied by AFM and SEM, and their chemical composition determined by EDS. Optical absorption studies of NiPcTSTNa(L) films were performed in the 200-1150 nm wavelength range. The optical bandgap of thin films was determined from the (alpha h nu)(1/2) vs h nu plots for indirect allowed transitions. The temperature dependence of electrical conductivity shows a semiconducting behaviour. The amorphous semiconductor films show thermal activation energies of electrical conduction between 3 center dot 3 and 3 center dot 7 eV.
Filiaciones:
Univ Nacl Autonoma Mexico, Inst Quim, Mexico City 04510, DF, Mexico
Facultad de Ingeniería, Universidad Anáhuac México Norte, Avenida Universidad Anahuac 46, Col. Lomas Anahuac, Huixquilucan, Estado de México 52786, Mexico
Centro de Investigación y de Estudios Avanzados Del Instituto Politécnico Nacional, Unidad Zacatenco, Instituto Politécnico Nacional 2508, México, D. F. 07360, Mexico
Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional, Unidad Querétaro, Apartado Postal 1-798, Querétaro, Qro. 76001, Mexico
Instituto de Química, Universidad Nacional Autónoma de México, Ciudad Universitaria, Circuito Exterior S/N, México, D. F. 04510, Mexico
All Open Access; Bronze
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