Pulsed laser deposition and characterization of La1-xSrxMnO3
Por:
Calderon, S, Escobar-Alarcon, L, Camps, E, Rodil, S, Betancourt, I, Olaya, JJ
Publicada:
1 oct 2012
Resumen:
La1-xSrxMnO3 manganite films with x=0.15, 0.33 and 0.4 were deposited onto silicon substrates by pulsed laser deposition in an 80/20 Ar/O-2 atmosphere at room temperature. After being deposited, the films were annealed at 900 degrees C in air in order to obtain the desired crystalline phase. Structural characterizations using X-Ray diffraction showed polycrystalline compounds having the predominant peaks corresponding to the perovskite structure. Morphological studies carried out by scanning electron microscopy revealed a very rough surface and led to deducing the nature of the growth process. Spectral ellipsometry was performed between 1.5 and 5 eV range at room temperature, showing electronic transitions near to 2.2 and 4.7 eV in a range of thicknesses between 94 and 107 nm. (C) 2012 Elsevier Ltd. All rights reserved.
Filiaciones:
Escobar-Alarcon, L:
Inst Nacl Invest Nucl, Mexico City 11801, DF, Mexico
Camps, E:
Inst Nacl Invest Nucl, Mexico City 11801, DF, Mexico
Rodil, S:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
Betancourt, I:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
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