Laser-induced molybdenum oxide formation by low energy (nJ)-high repetition rate (MHz) femtosecond pulses


Por: Cano-Lara M., Camacho-López S., Esparza-García A., Camacho-López M.A.

Publicada: 1 sep 2011
Resumen:
Experimental results on femtosecond (fs) laser-induced oxidation of molybdenum (Mo) thin films are presented. The Mo thin films were deposited on fused silica substrates by the magnetron DC-sputtering technique. The as-deposited thin films were characterized by X-ray diffraction, which indicates that bbc-molybdenum was grown. The films were irradiated in ambient air, using a femtosecond Ti:Sapphire laser (800 nm, 60 fs pulse duration, 70 MHz and 6.5 RI per pulse). The molybdenum thin films were laser scanned in the form of several millimeters long straight line traces, by using a per pulse laser fluence well below the (previously reported) ablation threshold. Optical Microscopy (OM) and Scanning Electron Microscopy (SEM) were used to study the laser-induced optical and morphology changes on the exposed zone. Energy Dispersive Spectrometry (EDS) and Micro-Raman Spectroscopy (MRS) were used to determine the degree of oxidation and the phase change across the laser irradiated paths on the

Filiaciones:
Cano-Lara M.:
 Departamento de Óptica, Centro de Investigación Científica y de Educación Superior de Ensenada, Carretera Ensenada-Tijuana 3918, Zona Playitas, Ensenada, Baja California 22860, Mexico

Camacho-López S.:
 Departamento de Óptica, Centro de Investigación Científica y de Educación Superior de Ensenada, Carretera Ensenada-Tijuana 3918, Zona Playitas, Ensenada, Baja California 22860, Mexico

Esparza-García A.:
 Univ Nacl Autonoma Mexico, Dept Tecnociencias, Ctr Ciencias Aplicadas & Desarrollo Tecnol, Mexico City 04510, DF, Mexico

Camacho-López M.A.:
 Facultad de Química, Universidad Autónoma Del Estado de México, Tollocan s/n, esq. Paseo Colón, Toluca, Estado de México 50110, Mexico
ISSN: 09253467
Editorial
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, Países Bajos
Tipo de documento: Article
Volumen: 33 Número: 11
Páginas: 1648-1653
WOS Id: 000295241000017

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