Study of Luminescence from GaN:Tb3+ Powders and Thin Films Deposited by MOVPE and PLD Methods
Por:
Tao J.H., Laski J., Perea-Lopez N., Shimizu S., McKittrick J., Talbot J.B., Mishra K.C., Hamby D.W., Raukas M., Klinedinst K., Hirata G.
Publicada:
1 ene 2009
Resumen:
Due to the recent commercial interest in nitride-based optoelectronics and rare-earth emission in nitride materials, the structural and optical characteristics of GaN:Tb3+ powders and thin films have been investigated in this work. The powder samples were made using a three-step solution method. Pulsed laser deposition (PLD) and metallorganic vapor phase epitaxy (MOVPE) methods were utilized for depositing GaN:Tb3+ films on sapphire substrates. The GaN powders with activator concentrations up to 8 atom % exhibited Tb3+ luminescence due to the D-5(3,4)-> F-7(j) transitions under cathodoluminescence (CL) as well as under 243 nm photon excitation. Both near-band-edge emission and activator emission have been observed in PLD thin films made from the corresponding GaN:Tb3+ powders. X-ray diffraction revealed polycrystalline PLD thin films with a preferred growth direction along the c axis, while scanning electron micrographs showed rough film morphology with submicrometer particles. CL emis
Filiaciones:
Tao J.H.:
Materials Science and Engineering Program, University of California, San Diego, San Diego, CA 92093, United States
Laski J.:
OSRAM SYLVANIA, Central Research, Beverly, MA 01915, United States
Perea-Lopez N.:
Materials Science and Engineering Program, University of California, San Diego, San Diego, CA 92093, United States
Shimizu S.:
Department of Nanoengineering, University of California, San Diego, San Diego, CA 92093, United States
McKittrick J.:
Materials Science and Engineering Program, University of California, San Diego, San Diego, CA 92093, United States
Department of Mechanical and Aerospace Engineering, University of California, San Diego, San Diego, CA 92093, United States
Talbot J.B.:
Materials Science and Engineering Program, University of California, San Diego, San Diego, CA 92093, United States
Department of Nanoengineering, University of California, San Diego, San Diego, CA 92093, United States
Mishra K.C.:
OSRAM SYLVANIA, Central Research, Beverly, MA 01915, United States
Hamby D.W.:
OSRAM SYLVANIA, Central Research, Beverly, MA 01915, United States
Raukas M.:
OSRAM SYLVANIA, Central Research, Beverly, MA 01915, United States
Klinedinst K.:
OSRAM SYLVANIA, Central Research, Beverly, MA 01915, United States
Hirata G.:
Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Ensenada 22800, Baja California, Mexico
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