Study of the influence of NH3 flow rates on the structure and photoluminescence of silicon-nitride films with silicon nanoparticles
Por:
López-Suárez A., Fandino, J, Monroy B.M., Santana G., Alonso J.C.
Publicada:
1 sep 2008
Resumen:
Silicon-nitride films with silicon nanoparticles have been prepared at 300 degrees C by remote plasma-enhanced chemical vapor deposition using mixtures of H-2, Ar and SiH2Cl2 and various NH3 flow rates. The films were characterized by means of Rutherford backscattering spectrometry, Fourier-transform infrared spectroscopy, single wavelength ellipsometry, high-resolution transmission electronic microscopy, atomic force microscopy and photoluminescence measurements. It was found a chemical stability as well as an increase in the photoluminescence signal for those films with the greatest amount of NH3. The increase in the photoluminescence signal is due to a quantum confinement effect produced by the nanoparticles, which were formed during the film's preparation process. (C) 2008 Elsevier B.V. All rights reserved.
Filiaciones:
López-Suárez A.:
Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
Monroy B.M.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Coyoacan 04510, DF, Mexico
Santana G.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Coyoacan 04510, DF, Mexico
Alonso J.C.:
Univ Nacl Autonoma Mexico, Inst Invest Mat, Coyoacan 04510, DF, Mexico
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