The state of the art of Sb2(S, Se)3thin film solar cells: Current progress and future prospect


Por: Nicolás-Marín M.M., González-Castillo J.R., Vigil-Galán O., Courel M.

Publicada: 1 ene 2022
Resumen:
In this work, a review focused on the recent development of antimony sulfide selenide (Sb2(S,Se)3) solar cells is presented. In particular, experimental and theoretical results are discussed to understand the current limiting factors of this technology, as well as possible routes for device promotion. The Sb2(S,Se)3 compound is introduced as an attractive compound for single junction and multijunction solar cells since it is described by a band-gap that can be tailored in the range of 1.1-1.8 eV. Furthermore, improved transport properties are observed in solar cells when SnO2:F is used as substrate due to better ribbons orientation. In addition, defect energy levels in the range of 0.49-0.52 eV and 0.69-0.81 eV associated to VSb and SeSb (or SSb), respectively result in carrier lifetime values in the range of 0.1-67 ns. It is demonstrated that, unlike other semiconductor compounds, temperatures lower than 450 °C are required for Sb2(S,Se)3 processing. Moreover, the highest solar cell efficiency of 10.7% has been reported by the hydrothermal method. Although Sb2(S,Se)3 is a stable compound, it is found that there are some instability problems concerning solar cells due to the use of the Spiro-OMeTAD as the hole transport layer. Finally, theoretical results show that interface defects are the main reason for low experimental efficiencies. In particular, losses at the CdS/Sb2(S,Se)3 interface are introduced as dominant. In this sense, the introduction of Zn to the CdS compound is presented as a potential solution, which can result in higher solar cell efficiencies along with the reduction of Cd concentration. © 2022 IOP Publishing Ltd.

Filiaciones:
Nicolás-Marín M.M.:
 Escuela Superior de Física y Matemáticas - Instituto Politécnico Nacional, Ciudad de México, 07738, Mexico

González-Castillo J.R.:
 Escuela Superior de Física y Matemáticas - Instituto Politécnico Nacional, Ciudad de México, 07738, Mexico

Vigil-Galán O.:
 Escuela Superior de Física y Matemáticas - Instituto Politécnico Nacional, Ciudad de México, 07738, Mexico

Courel M.:
 Centro Universitario de Los Valles (CUValles), Universidad de Guadalajara, Carretera Guadalajara - Ameca Km. 45.5, Jalisco, Ameca, 46600, Mexico
ISSN: 00223727
Editorial
IOP PUBLISHING LTD, DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND, Reino Unido
Tipo de documento: Review
Volumen: 55 Número: 30
Páginas:
WOS Id: 000777821700001