Etched ion tracks in amorphous SiO2 characterized by small angle x-ray scattering: Influence of ion energy and etching conditions
Por:
Hadley A., Notthoff C., Mota-Santiago P., Hossain U.H., Kirby N., Toimil-Molares M.E., Trautmann C., Kluth P.
Publicada:
1 ene 2019
Resumen:
Small angle x-ray scattering was used to study the morphology of conical structures formed in thin films of amorphous SiO2. Samples were irradiated with 1.1 GeV Au ions at the GSI UNILAC in Darmstadt, Germany, and with 185, 89 and 54 MeV Au ions at the Heavy Ion Accelerator Facility at ANU in Canberra, Australia. The irradiated material was subsequently etched in HF using two different etchant concentrations over a series of etch times to reveal conically shaped etched channels of various sizes. Synchrotron based SAXS measurements were used to characterize both the radial and axial ion track etch rates with unprecedented precision. The results show that the ion energy has a significant effect on the morphology of the etched channels, and that at short etch times resulting in very small cones, the increased etching rate of the damaged region in the radial direction with respect to the ion trajectory is significant. © 2019 IOP Publishing Ltd.
Filiaciones:
Hadley A.:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
Notthoff C.:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
Mota-Santiago P.:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
Hossain U.H.:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
Kirby N.:
Australian Synchrotron, ANSTO, 800 Blackburn Rd, Clayton, VIC 3168, Australia
Toimil-Molares M.E.:
GSI Helmholzzentrum für Schwerionenforschung, Plankstr. 1, Darmstadt, D-64291, Germany
Trautmann C.:
GSI Helmholzzentrum für Schwerionenforschung, Plankstr. 1, Darmstadt, D-64291, Germany
Technische Universitat Darmstadt, Darmstadt, D-64289, Germany
Kluth P.:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
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