Unravelling the secrets of the resistance of GaN to strongly ionising radiation
Por:
Sequeira M.C., Mattei J.-G., Vazquez H., Djurabekova F., Nordlund K., Monnet I., Mota-Santiago P., Kluth P., Grygiel C., Zhang S., Alves E., Lorenz K.
Publicada:
1 ene 2021
Categoría:
Physics and astronomy (miscellaneous)
Resumen:
GaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices. © 2021, The Author(s).
Filiaciones:
Sequeira M.C.:
IPFN, Instituto Superior Técnico, University of Lisbon, Lisbon, Portugal
Mattei J.-G.:
CIMAP, Normandie University, CEA, CNRS, UNICAEN, ENSICAEN-BP5133, Caen Cedex 5, France
Vazquez H.:
Department of Physics, University of Helsinki, Helsinki, Finland
Djurabekova F.:
Department of Physics, University of Helsinki, Helsinki, Finland
Nordlund K.:
Department of Physics, University of Helsinki, Helsinki, Finland
Monnet I.:
CIMAP, Normandie University, CEA, CNRS, UNICAEN, ENSICAEN-BP5133, Caen Cedex 5, France
Mota-Santiago P.:
Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, ACT, Australia
Kluth P.:
Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, ACT, Australia
Grygiel C.:
CIMAP, Normandie University, CEA, CNRS, UNICAEN, ENSICAEN-BP5133, Caen Cedex 5, France
Zhang S.:
School of Nuclear Science and Technology, Lanzhou University, Lanzhou, China
Alves E.:
IPFN, Instituto Superior Técnico, University of Lisbon, Lisbon, Portugal
Lorenz K.:
IPFN, Instituto Superior Técnico, University of Lisbon, Lisbon, Portugal
Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC MN), Lisbon, Portugal
Gold
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