Conical etched ion tracks in SiO2 characterised by small angle X-ray scattering


Por: Hadley A., Notthoff C., Mota-Santiago P., Hossain U.H., Mudie S., Toimil-Molares M.E., Trautmann C., Kluth P.

Publicada: 1 ene 2018
Resumen:
We present a systematic study of the evolution of chemically etched ion tracks formed in thermally grown a-SiO2 after irradiation with 1.1 GeV and 185 MeV Au ions. The irradiated material was subsequently etched with 2.5% hydrofluoric acid (HF) for different times yielding hollow conical shaped structures of various sizes. The characterisation of these structures was carried out by synchrotron-based small-angle X-ray scattering (SAXS) measurements, enabling the determination of the geometry and dimensions of the etched conical structures with sub-nanometre precision. The results indicate that the track etching behavior is influenced by the ion energy, and that at short etching times the latent track damage in the radial direction becomes significant. © 2017 Elsevier B.V.

Filiaciones:
Hadley A.:
 Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia

Notthoff C.:
 Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia

Mota-Santiago P.:
 Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia

Hossain U.H.:
 Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia

Mudie S.:
 Australian Synchrotron, 800 Blackburn Rd, Clayton, VIC 3168, Australia

Toimil-Molares M.E.:
 GSI Helmholzzentrum für Schwerionenforschung, Plankstrasse 1, Darmstadt, 64291, Germany

Trautmann C.:
 GSI Helmholzzentrum für Schwerionenforschung, Plankstrasse 1, Darmstadt, 64291, Germany

 Technische Universität Darmstadt, Darmstadt, 64289, Germany

Kluth P.:
 Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
ISSN: 0168583X
Editorial
Elsevier Science Publishers B.V., Amsterdam, Netherlands, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, Países Bajos
Tipo de documento: Article
Volumen: 435 Número:
Páginas: 133-136
WOS Id: 000452585500024