Temperature dependence of Raman and photoluminescence spectra of pure and high-quality MoO3 synthesized by hot wall horizontal thermal evaporation
Por:
Calvo-Mola, C., Torres-Costa, V, Gonzalez, Y., Ruediger, A., Sanchez, M., Santana, G., Contreras-Puente, G., de Melo, C., Ghanbaja, J., Horwat, D., de Melo, O.
Publicada:
1 ene 2022
Resumen:
In this work, a novel system for the hot wall evaporation of MoO3 in a horizontal furnace and at low vacuum atmosphere was settled. Pure MoO3 material was obtained without the presence of other phases and with a strong preferential orientation, as revealed by electron microscopy, micro-Raman spectroscopy and x-ray diffraction. Photoluminescence and Raman spectra were measured as a function of temperature. As a result, the first-order temperature coefficient of the fifteen measured vibrational modes is reported and compared with the scarce literature data available. The relation of these coefficients with the thermal expansion coefficient is discussed in the framework of the Grüneisen model. Moreover, for the first time, the temperature dependence of the different contributions of photoluminescence spectra for MoO3 is reported, and an anomalous increase in PL intensity of all transitions is observed in the range of 40–140 K, followed by a normal quenching at high temperatures. The Shibata model was used to interpret the origin of this anomalous effect. © 2022 Elsevier B.V.
Filiaciones:
Calvo-Mola, C.:
Physics Faculty, University of Havana, La Habana, 10400, Cuba
Univ Havana, Phys Fac, Havana 10400, Cuba
Torres-Costa, V:
Departamento de Física Aplicada, Universidad Autónoma de Madrid. Cantoblanco, Madrid, 28049, Spain
Univ Autonoma Madrid Cantoblanco, Dept Fis Aplicada, Madrid 28049, Spain
Gonzalez, Y.:
Institut National de la recherche scientifique, Centre Énergie, Matériaux, Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada
Ctr Energie Mat Telecommun, Inst Natl Rech Sci, 1650 Blvd Lionel Boulet, Varennes, PQ J3X 1S2, Canada
Ruediger, A.:
Institut National de la recherche scientifique, Centre Énergie, Matériaux, Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada
Ctr Energie Mat Telecommun, Inst Natl Rech Sci, 1650 Blvd Lionel Boulet, Varennes, PQ J3X 1S2, Canada
Sanchez, M.:
Physics Faculty, University of Havana, La Habana, 10400, Cuba
Univ Havana, Phys Fac, Havana 10400, Cuba
Santana, G.:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Cd. Universitaria, A.P. 70-360, Coyoacán, Mexico D. F., 04510, Mexico
Univ Nacl Autonoma Mexico, Inst Invest Mat, AP 70-360, Mexico City 04510, DF, Mexico
Contreras-Puente, G.:
Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, México City, Mexico
Inst Politecn Nacl, Escuela Super Fis & Matemat, Mexico City, DF, Mexico
de Melo, C.:
Institut Jean Lamour, Université de Lorraine, UMR 7198, Nancy, F-54000, France
Univ Lorraine, Inst Jean Lamour, UMR 7198, F-54000 Nancy, France
Ghanbaja, J.:
Institut Jean Lamour, Université de Lorraine, UMR 7198, Nancy, F-54000, France
Univ Lorraine, Inst Jean Lamour, UMR 7198, F-54000 Nancy, France
Horwat, D.:
Institut Jean Lamour, Université de Lorraine, UMR 7198, Nancy, F-54000, France
Univ Lorraine, Inst Jean Lamour, UMR 7198, F-54000 Nancy, France
de Melo, O.:
Physics Faculty, University of Havana, La Habana, 10400, Cuba
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Cd. Universitaria, A.P. 70-360, Coyoacán, Mexico D. F., 04510, Mexico
(Corresponding Author), Univ Havana, Phys Fac, Havana 10400, Cuba
Univ Havana, Phys Fac, Havana 10400, Cuba
Univ Nacl Autonoma Mexico, Inst Invest Mat, AP 70-360, Mexico City 04510, DF, Mexico
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