On the mobility of dislocations in germanium and silicon
Por:
Gómez A.M., Hirsch P.B.
Publicada:
1 ene 1977
Resumen:
The motion of single dissociated dislocations in germanium and silicon has been studied directly in the electron microscope by moans of the weak-beam technique and utilizing a heating stage. The observations indicate that the dislocations glide in the dissociated configuration. Screws whose images appear as single peaks in 220 reflections with g220 parallel to the screw direction, have been shown to have cross-slipped from the (111) plane parallel to the plane of the specimen, to the steeply inclined (111) plane, on which they are dissociated. Contrast experiments and calculations show that the two partials can be resolved as sharp peaks with g202 at 60° to the screw direction. © 1977, Taylor & Francis Group, LLC. All rights reserved.
Filiaciones:
Gómez A.M.:
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, United Kingdom
Hirsch P.B.:
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, United Kingdom
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