Solution based synthesis of Cu(In,Ga)Se2 microcrystals and thin films


Por: Latha M., Aruna-Devi R., Velumani S., Murali B., Santoyo-Salazar J., De Moure-Flores F.

Publicada: 1 ene 2019
Resumen:
Herein, for the first time, we report the synthesis of quaternary Cu(In,Ga)Se2 microcrystals (CIGSe MCs) using a facile and economical one-pot heating-up method. The most important parameters such as reaction temperature and time were varied to study their influences on the structural, morphological, compositional and optical properties of the MCs. Based on the results, the formation of CIGSe was initiated from binary ß-CuSe and then converted into pure phase CIGSe by gradual incorporation of In3+ and Ga3+ ions into the ß-CuSe crystal lattice. As the reaction time increases, the band gap energy was increased from 1.10 to 1.28 eV, whereas the size of the crystals increased from 0.9 to 3.1 µm. Besides, large-scale synthesis of CIGSe MCs exhibited a high reaction yield of 90%. Furthermore, the CIGSe MCs dispersed in the ethanol was coated as thin films by a drop casting method, which showed the optimum carrier concentration, high mobility and low resistivity. Moreover, the photoconductivity of the CIGSe MC thin film was enhanced by three order magnitude in comparison with CIGSe NC thin films. The solar cells fabricated with CIGSe MCs showed the PCE of 0.59% which is 14.75 times higher than CIGSe NCs. These preliminary results confirmed the potential of CIGSe MCs as an active absorber layer in low-cost thin film solar cells. © 2019 The Royal Society of Chemistry.

Filiaciones:
Latha M.:
 Facultad de Química, Materiales-Energía, Universidad Autónomade Querétaro (UAQ), Santiago de Querétaro Qro, C.P.76010, Mexico

Aruna-Devi R.:
 Facultad de Química, Materiales-Energía, Universidad Autónomade Querétaro (UAQ), Santiago de Querétaro Qro, C.P.76010, Mexico

Velumani S.:
 Departamento de Ingeniería Eléctrica CINVESTAV-IPN, Ciudad de México, Av. IPN 2508, San Pedro Zacatenco, C.P. 07360, Mexico

Murali B.:
 Solar Cells and Photonics Research Laboratory, School of Chemistry, University of Hyderabad, Prof. C. R. Rao RoadTelangana 500046, India

Santoyo-Salazar J.:
 Departamento de Física CINVESTAV-IPN, Ciudad de México, Av. IPN 2508, San Pedro Zacatenco, C.P. 07360, Mexico

De Moure-Flores F.:
 Facultad de Química, Materiales-Energía, Universidad Autónomade Querétaro (UAQ), Santiago de Querétaro Qro, C.P.76010, Mexico
ISSN: 20462069
Editorial
Royal Society of Chemistry, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND, Reino Unido
Tipo de documento: Article
Volumen: 9 Número: 60
Páginas: 35197-35208
WOS Id: 000498844000058
ID de PubMed: 35530668