Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target
Por:
Chale-Lara, F., Zapata-Torres, M., Caballero-Briones, F., De la Cruz, W., Cruz Gonzalez, N., Huerta-Escamilla, C., Farias, M. H.
Publicada:
1 jul 2019
Resumen:
We report the synthesis of AlN hexagonal thin films by pulsed laser
ablation, using Al target in nitrogen ambient over natively-oxidized Si
(111) at 600 degrees C. Composition and chemical state were determined
by X-ray photoelectron spectroscopy, while structural properties were
investigated using X-ray diffraction. High-resolution XPS spectra
present a gradual shift to higher binding energies on the Al-2p peak
when nitrogen pressure is incremented, indicating the formation of the
AlN compound. At 30 mTorr nitrogen pressure, the Al-2p peak corresponds
to AlN, located at 73.1 eV, and the XRD pattern shows a hexagonal phase
of AlN. The successful formation of the AlN compound is corroborated by
UV-Vis reflectivity measurements.
Filiaciones:
Chale-Lara, F.:
Inst Politecn Nacl, CICATA Altamira, Lab Mat Fotovolta, Km 14-5 Carr Tampico Pto Ind Altamira, Altamira 89600, Tamaulipas, Mexico
Zapata-Torres, M.:
Inst Politecn Nacl, CICATA, Unidad Legaria, Legaria 694 Col Irrigac, Ciudad De Mexico 11500, Mexico
Caballero-Briones, F.:
Inst Politecn Nacl, CICATA Altamira, Lab Mat Fotovolta, Km 14-5 Carr Tampico Pto Ind Altamira, Altamira 89600, Tamaulipas, Mexico
De la Cruz, W.:
Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Km 107 Carretera Tijuana Ensenada, Ensenada 22860, Baja California, Mexico
Cruz Gonzalez, N.:
Inst Politecn Nacl, CONACyT, CICATA, Unidad Legaria, Legaria 694 Col Irrigac, Ciudad De Mexico 11500, Mexico
Huerta-Escamilla, C.:
Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Km 107 Carretera Tijuana Ensenada, Ensenada 22860, Baja California, Mexico
Farias, M. H.:
Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Km 107 Carretera Tijuana Ensenada, Ensenada 22860, Baja California, Mexico
Gold
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