Understanding the open circuit voltage in organic solar cells on the basis of a donor-acceptor abrupt (p-n++) heterojunction
Por:
Nolasco J.C., Castro-Carranza A., León Y.A., Briones-Jurado C., Gutowski J., Parisi J., von Hauff E.
Publicada:
1 ene 2019
Resumen:
By using electrical characterization and classical solid state semiconductor device theory, we demonstrate that the open circuit voltage (V oc ) in organic solar cells based on non-intentional doped semiconductors is fundamentally limited by the built-in potential (V bi ) originated at a donor-acceptor abrupt (p-n ++ ) heterojunction in case of selective contacts. Our analysis is validated using P3HT:PCBM devices fabricated in our research group. We also demonstrate that such a result can be generalized using data already reported in literature for fullerene-based solar cells. Finally, we show that the dependence of V oc on the device contacts can be understood in terms of the potential barriers formed by the Fermi level alignment of semiconductors at the heterojunction and at the Schottky junctions. © 2019 International Solar Energy Society
Filiaciones:
Nolasco J.C.:
Energy and Semiconductor Research Laboratory, Department of Physics, Carl von Ossietzky University of Oldenburg26111, Germany
Micro and Nanotechnology Research Centre MICRONA, Veracruz University, Veracruz, 94294, Mexico
Castro-Carranza A.:
Semiconductor Optics, Institute of Solid State Physics, University of Bremen, Bremen, 28359, Germany
Science of Sustainable Materials, National School of Higher Studies Unit Morelia, National Autonomous University of Mexico (ENES Morelia UNAM), Morelia, 58190, Mexico
León Y.A.:
Science of Sustainable Materials, National School of Higher Studies Unit Morelia, National Autonomous University of Mexico (ENES Morelia UNAM), Morelia, 58190, Mexico
Briones-Jurado C.:
Science of Sustainable Materials, National School of Higher Studies Unit Morelia, National Autonomous University of Mexico (ENES Morelia UNAM), Morelia, 58190, Mexico
Gutowski J.:
Semiconductor Optics, Institute of Solid State Physics, University of Bremen, Bremen, 28359, Germany
MAPEX Center of Materials and Processes, University of Bremen, Bremen, 28359, Germany
Parisi J.:
Energy and Semiconductor Research Laboratory, Department of Physics, Carl von Ossietzky University of Oldenburg26111, Germany
von Hauff E.:
Physics of Energy, Department of Physics and Astronomy, Vrije Universiteit Amsterdam, Amsterdam, 1081, Netherlands
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