Ti-doped YMnO3: Magnetic and thermal studies at low temperature and dielectric properties at high temperature


Por: Durán A., Guzmán G., Ochoa-Guerrero C.I., Herbert C., Escudero R., Morales F., Escamilla R.

Publicada: 21 ene 2019
Categoría: Physics and astronomy (miscellaneous)

Resumen:
We study the magnetic, thermal, and dielectric properties in Ti-doped YMnO3. Crystal structure analysis showed that as Mn3+ is replaced by Ti4+ ions, a phase transition from hexagonal symmetry with P6(3)cm space group to rhombohedral symmetry with R3c space group takes place at around x = 0.14 of TO' doping. The local deformation, as well as the partial charge compatibility of the Ti+4 ion at the Mn-+3,Mn-+4 site, allows solubility up to 20% in the YMnO3 matrix. The magnetic analysis at a low temperature showed that the effective moments, mu(eff), and the Curie-Weiss temperature, ecw, drop rapidly as Ti+4 replaces the Mn+3 ion. This fact indicates that the Mn3(+) magnetic moments in the geometrically frustrated antiferromagnetic array are strongly decoupled by the Ti+4 substitution. Also, the magnetic contribution of the specific heat showed that the magnetic transition observed at about 75 K for the pristine sample decreases down to similar to 40 K with increasing Ti+4 up to x = 0.20, which indicates that the frustrated (hexagonal) magnetic phase coexists with the rhombohedral phase. On the other hand, the dielectric properties from room temperature to 800 K showed an increase in the dielectric loss with increasing Ti4+ doping, which is detrimental to the ferroelectric properties. Furthermore, the AC conductivity measurements showed three thermally activated relaxation behaviors following the Arrhenius law in three different temperature ranges in the pristine sample. We found that the conductivity behavior is dominated by a single slope from room temperature to 800 K when Ti-doping reaches 20% in the YMnO3 matrix. The local lattice deformation plus hole addition (small polaron) by Ti+4 at the Mn+3 site is the dominant mechanism of conduction in the rhombohedral phase. The gradual increase of holes as charge carriers with increasing of Ti4+ ions in the YMnO3 matrix is also responsible for the increase in the dielectric loss. The results shown here infer that the decoupling of the frustrated AFM lattice and the increase of charge carriers in the magnetically disordered phase by Ti substitution imply a destruction of the ferroelectric state and the magnetoelectricity below the Neel temperature.

Filiaciones:
Durán A.:
 Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km. 107 Carretera Tijuana-Ensenada, Apartado Postal 14, Ensenada, Baja California, C. P. 22800, Mexico

 Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Km 107 Carretera Tijuana Ensenada, Ensenada 22800, Baja California, Mexico

Guzmán G.:
 Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km. 107 Carretera Tijuana-Ensenada, Apartado Postal 14, Ensenada, Baja California, C. P. 22800, Mexico

 Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Km 107 Carretera Tijuana Ensenada, Ensenada 22800, Baja California, Mexico

Ochoa-Guerrero C.I.:
 Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km. 107 Carretera Tijuana-Ensenada, Apartado Postal 14, Ensenada, Baja California, C. P. 22800, Mexico

 Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Km 107 Carretera Tijuana Ensenada, Ensenada 22800, Baja California, Mexico

Herbert C.:
 Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km. 107 Carretera Tijuana-Ensenada, Apartado Postal 14, Ensenada, Baja California, C. P. 22800, Mexico

 Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Km 107 Carretera Tijuana Ensenada, Ensenada 22800, Baja California, Mexico

Escudero R.:
 Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Ciudad de México, 04510, Mexico

 Univ Nacl Autonoma Mexico, Inst Invest Mat, Apartado Postal 70-360, Ciudad De Mexico 04510, Mexico

Morales F.:
 Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Ciudad de México, 04510, Mexico

 Univ Nacl Autonoma Mexico, Inst Invest Mat, Apartado Postal 70-360, Ciudad De Mexico 04510, Mexico

Escamilla R.:
 Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Ciudad de México, 04510, Mexico

 Univ Nacl Autonoma Mexico, Inst Invest Mat, Apartado Postal 70-360, Ciudad De Mexico 04510, Mexico
ISSN: 00218979
Editorial
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA, Estados Unidos America
Tipo de documento: Article
Volumen: 125 Número: 3
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WOS Id: 000456264400013