Effect of Ag doping on structural, optical and electrical properties of antimony sulfide thin films


Por: Diliegros-Godines C.J., Santos Cruz J., Mathews N.R., Pal M.

Publicada: 1 ago 2018 Ahead of Print: 1 ene 2018
Resumen:
This work reveals the effect of silver doping on structural, optical and electrical properties of Sb2S3 films grown by a citrate-mediated chemical bath deposition technique. The silver content in solution was 7.5 mol% with respect to Sb3+ ions. The films were deposited in a cold bath for four hours and subjected to thermal treatment in a N-2 atmosphere at 300 A degrees C for 1 h. Polycrystalline nature of Sb2S3 films with orthorhombic phase was confirmed in both undoped and Ag-doped samples by X-ray diffraction technique and Raman spectroscopy. Scanning electron microscopy imaging showed the presence of irregular-shaped interconnected particulate grains in the undoped films, while nearly spherical clusters of smaller grain size were observed for Ag-doped Sb2S3 films. X-ray photoelectron spectroscopy results revealed the incorporation of metallic Ag into the Sb2S3 lattice. A detailed growth mechanism has been proposed for the formation of Sb2S3 and incorporation of metallic silver in the host matrix. The optical properties were recorded by UV-Vis diffuse reflectance spectroscopy. The inclusion of Ag in Sb2S3 films causes a red shift in band gap values from 1.75 to 1.66 eV. The dark resistivity of Sb2S3 films was decreased by one order on silver doping.

Filiaciones:
Diliegros-Godines C.J.:
 Instituto de Física, BUAP, Av. San Claudio y Blvd. 18 Sur Col. San Manuel, Ciudad Universitaria, Puebla, Mexico

Santos Cruz J.:
 Facultad de Química, Materiales-Energía, Universidad Autónoma de Querétaro, Santiago de Querétaro, Qro, Mexico

Mathews N.R.:
 Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Temixco, Morelos, Mexico

Pal M.:
 Instituto de Física, BUAP, Av. San Claudio y Blvd. 18 Sur Col. San Manuel, Ciudad Universitaria, Puebla, Mexico
ISSN: 00222461
Editorial
Kluwer Academic Publishers, 233 SPRING ST, NEW YORK, NY 10013 USA, Estados Unidos America
Tipo de documento: Article
Volumen: 53 Número: 16
Páginas: 11562-11573
WOS Id: 000433486700034