Indium-doped ZnO nanorods grown on Si (111) using a hybrid ALD-solvothermal method


Por: Cervantes-Lopez, J. L., Rangel, R., Garcia-Mendez, M., Tiznado, H., Contreras, O., Quintana, P., Bartolo-Perez, P., Alvarado-Gil, J. J.

Publicada: 1 jul 2017
Resumen:
Atomic layer deposition (ALD) followed by microwave hydrothermal processing was successfully employed for producing doped and vertically aligned ZnO nanorod arrays with different aspect ratio. Firstly, a textured ZnO layer with preferential orientation normal to the c-axis was formed on substrate (111) silicon single crystals by means of the ALD technique. This was achieved through the decomposition of diethylzinc at 190 degrees C and 3.289 x 10(-4) atm, which provided an adequate template with nucleation sites, favoring further growth of vertical nanorods. Subsequently, nanorod array growth was produced on the same surfaces through solvothermal synthesis using as promoter a solution of Zn(NO3)(2). In addition, growth of indium-doped ZnoO nanorods over the substrates was produced by using In(CH3COO)(3) as a doping agent. The method presented allows good quality ZnO and Zn1-xInxO thin films to be obtained. Photoluminiscence spectra show clear evidence of the inclusion of indium in the ZnO matrix. The higher intensity ratio Zn0.96In0.4O/ZnO was increased 40-fold, demonstrating such an effect.

Filiaciones:
Cervantes-Lopez, J. L.:
 Univ Michoacana, Fac Ingn Quim, Programa Doctorado Ciencias Ingn Quim, SNH, Morelia 58030, Mich, Mexico

 Univ Michoacana SNH, Fac Ingn Quim, Programa Doctorado Ciencias Ingn Quim, Morelia 58030, Mich, Mexico

Rangel, R.:
 Univ Michoacana, Fac Ingn Quim, Div Estudios Posgrad, SNH, Morelia 58030, Mich, Mexico

 Univ Michoacana SNH, Fac Ingn Quim, Div Estudios Posgrad, Morelia 58030, Mich, Mexico

Garcia-Mendez, M.:
 Univ Autonoma Nuevo Leon, Fac Ciencias Fis Matemat, San Nicolas De Los Garza, Nuevo Leon, Mexico

 Univ Autonoma Nuevo Leon, Fac Ciencias Fis Matemat, San Nicolas De Los Garza, NL, Mexico

Tiznado, H.:
 UNAM, CNyN, Ensenada, Baja California, Mexico

 UNAM, CNYN, Ensenada Baja California, Nuevo Leon, Mexico

Contreras, O.:
 UNAM, CNyN, Ensenada, Baja California, Mexico

 UNAM, CNYN, Ensenada Baja California, Nuevo Leon, Mexico

Quintana, P.:
 CINVESTAV, IPN, Dept Fis Aplicada, Unidad Merida, Merida, Yucatan, Mexico

 CINVESTAV IPN, Unidad Merida, Dept Fis Aplicada, Merida, Yucatan, Mexico

Bartolo-Perez, P.:
 CINVESTAV, IPN, Dept Fis Aplicada, Unidad Merida, Merida, Yucatan, Mexico

 CINVESTAV IPN, Unidad Merida, Dept Fis Aplicada, Merida, Yucatan, Mexico

Alvarado-Gil, J. J.:
 CINVESTAV, IPN, Dept Fis Aplicada, Unidad Merida, Merida, Yucatan, Mexico

 CINVESTAV IPN, Unidad Merida, Dept Fis Aplicada, Merida, Yucatan, Mexico
ISSN: 20531591
Editorial
Institute of Physics Publishing, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND, Reino Unido
Tipo de documento: Article
Volumen: 4 Número: 7
Páginas:
WOS Id: 000408251400006