Possibility of intrinsic Si gap states localized at the Si-SiO2 interface
Por:
Martinez E., Yndurin F.
Publicada:
1 ene 1982
Resumen:
We show that intermediate-range order at the Si surface may induce important features in the electronic structure at the Si-SiO2 interface. The electronic states at the top of the Si valence band at the Si-SiO2 interface are very sensitive to changes in the sp3 hybrid self-energy if the two dimensionality is included. We show that for a parametrized tight-binding Hamiltonian the two dimensionality of the interface can favor the existence of localized interface states in the Si gap. © 1982 The American Physical Society.
Filiaciones:
Martinez E.:
Departmento de Fisica Fundamental, Facultad de Ciencias, Universidad Autonoma, Canto Blanco, Madrid, Spain
Yndurin F.:
Departmento de Fisica Fundamental, Facultad de Ciencias, Universidad Autonoma, Canto Blanco, Madrid, Spain
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