Laser doping for microelectronics and microtechnology


Por: Sarnet T., Kerrien G., Yaakoubi N., Bosseboeuf A., Dufour-Gergam E., Débarre D., Boulmer J., Kakushima K., Laviron C., Hernandez M., Venturini J., Bourouina T.

Publicada: 1 ene 2004
Resumen:
The future CMOS generations for microelectronics will require advanced doping techniques capable to realize ultrashallow, highly-doped junctions with abrupt profiles. Recent experiments have shown the potential capabilities of laser processing of Ultra Shallow Junctions (USJ). According to the International Technology Roadmap for Semiconductors, two laser processes are able to reach ultimate predictions: laser thermal processing or annealing (LTP or LTA) and Gas Immersion Laser Doping (GILD). Both processes are based on rapid melting/solidification of the substrate. During solidification, the liquid silicon, which contains the dopants, is formed epitaxially from the underlying crystalline silicon. In the case of laser thermal annealing dopants are implanted before laser processing. GILD skips the ion-implantation step: in this case dopants are chemisorbed on the Si surface before the laser shot. The dopants are then incorporated and activated during the laser process. Activation is limited to the liquid layer and this chemisorption/laser shot cycle can be repeated until the desired concentration is reached. In this paper, we investigate the possibilities and limitations of the GILD technique for two different substrates: silicon bulk and SOI. We also show some laser doping applications for the fabrication of micro and nanoresonators, widely used in the MEMS Industry.

Filiaciones:
Sarnet T.:
 IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France

Kerrien G.:
 IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France

Yaakoubi N.:
 IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France

Bosseboeuf A.:
 IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France

Dufour-Gergam E.:
 IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France

Débarre D.:
 IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France

Boulmer J.:
 IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France

Kakushima K.:
 LIMMS, University of Tokyo, 153-8505, Japan

Laviron C.:
 IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France

 CEA / DRT, LETI / DTS, 17, avenue des Martyrs, 38054 Grenoble, France

Hernandez M.:
 SOPRA, 26, rue Pierre Joigneaux, 92270 Bois Colombes, France

Venturini J.:
 SOPRA, 26, rue Pierre Joigneaux, 92270 Bois Colombes, France

Bourouina T.:
 ESIEE, Cité Descartes, 2 Bd Blaise Pascal, 93162 Noisy-le-Grand Cedex, France
ISSN: 0277786X
Editorial
SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, Estados Unidos America
Tipo de documento: Conference Paper
Volumen: 5448 Número: PART
Páginas: 669-680
WOS Id: 000224486600066