Laser doping for microelectronics and microtechnology
Por:
Sarnet T., Kerrien G., Yaakoubi N., Bosseboeuf A., Dufour-Gergam E., Débarre D., Boulmer J., Kakushima K., Laviron C., Hernandez M., Venturini J., Bourouina T.
Publicada:
1 ene 2004
Resumen:
The future CMOS generations for microelectronics will require advanced doping techniques capable to realize ultrashallow, highly-doped junctions with abrupt profiles. Recent experiments have shown the potential capabilities of laser processing of Ultra Shallow Junctions (USJ). According to the International Technology Roadmap for Semiconductors, two laser processes are able to reach ultimate predictions: laser thermal processing or annealing (LTP or LTA) and Gas Immersion Laser Doping (GILD). Both processes are based on rapid melting/solidification of the substrate. During solidification, the liquid silicon, which contains the dopants, is formed epitaxially from the underlying crystalline silicon. In the case of laser thermal annealing dopants are implanted before laser processing. GILD skips the ion-implantation step: in this case dopants are chemisorbed on the Si surface before the laser shot. The dopants are then incorporated and activated during the laser process. Activation is limited to the liquid layer and this chemisorption/laser shot cycle can be repeated until the desired concentration is reached. In this paper, we investigate the possibilities and limitations of the GILD technique for two different substrates: silicon bulk and SOI. We also show some laser doping applications for the fabrication of micro and nanoresonators, widely used in the MEMS Industry.
Filiaciones:
Sarnet T.:
IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France
Kerrien G.:
IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France
Yaakoubi N.:
IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France
Bosseboeuf A.:
IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France
Dufour-Gergam E.:
IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France
Débarre D.:
IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France
Boulmer J.:
IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France
Kakushima K.:
LIMMS, University of Tokyo, 153-8505, Japan
Laviron C.:
IEF Inst. d'Electron. Fondamentale, Université Paris Sud, Bât. 220, 91405 Orsay, France
CEA / DRT, LETI / DTS, 17, avenue des Martyrs, 38054 Grenoble, France
Hernandez M.:
SOPRA, 26, rue Pierre Joigneaux, 92270 Bois Colombes, France
Venturini J.:
SOPRA, 26, rue Pierre Joigneaux, 92270 Bois Colombes, France
Bourouina T.:
ESIEE, Cité Descartes, 2 Bd Blaise Pascal, 93162 Noisy-le-Grand Cedex, France
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