All-chemically deposited solar cells with antimony sulfide-selenide/lead sulfide thin film absorbers
Por:
Messina S., Nair M.T.S., Nair P.K.
Publicada:
1 ene 2007
Resumen:
Solar cell structures with Sb2SxSe3-x and PbS as absorber layers were fabricated on commercial transparent conductive oxide coated glass by chemical deposition. The solid solution with a graded band gap of 1-1.8 eV was prepared by heating at 250°C an Sb2S 3 thin film in contact with a chemically deposited Se-thin film. A PbS thin film deposited on this layer basically fulfils the role of a p + layer; its role as an absorber is yet to be studied. Open circuit voltage of 560 mV and short circuit current density »0.5 mA/cm2 under 1 kW/m2 tungsten halogen radiation are characteristics of these cells. These results may form the basis for developing an alternative thin film solar cell technology. © 2007 Materials Research Society.
Filiaciones:
Messina S.:
Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Av. Xochicalco S/N, Temixco, Morelos, 62580, Mexico
Nair M.T.S.:
Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Av. Xochicalco S/N, Temixco, Morelos, 62580, Mexico
Nair P.K.:
Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Av. Xochicalco S/N, Temixco, Morelos, 62580, Mexico
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