Silicon nanocrystals and defects produced by silicon and silicon-and-gold implantation in silica
Por:
Barthou C., Duong P.H., Oliver A., Cheang-Wong J.C., Rodríguez-Fernández L., Crespo-Sosa A., Itoh T., Lavallard P.
Publicada:
1 ene 2003
Resumen:
Silica samples implanted with silicon (Si) ions and implanted sequentially with Si and gold (Au) ions were studied. The silica reduction due to the Au presence contributed to the formation of silicon nanoclusters (NC). The excitation spectrum of the 750-nm line was an indication that the emission came from a localized state in the NC.
Filiaciones:
Barthou C.:
Laboratoire d'Optique des Solides, UMR 7601, Université Paris 6, 4 Place Jussieu, F-75252, Paris, France
Duong P.H.:
Institute of Materials Science, NCST, Hanoi, Viet Nam
Oliver A.:
Instituto de Física, Univ. Nac. Auton. de Mexico, A.P. 20-364, México, D.F. 01000, Mexico
Cheang-Wong J.C.:
Instituto de Física, Univ. Nac. Auton. de Mexico, A.P. 20-364, México, D.F. 01000, Mexico
Rodríguez-Fernández L.:
Instituto de Física, Univ. Nac. Auton. de Mexico, A.P. 20-364, México, D.F. 01000, Mexico
Crespo-Sosa A.:
Instituto de Física, Univ. Nac. Auton. de Mexico, A.P. 20-364, México, D.F. 01000, Mexico
Itoh T.:
Grad. School of Engineering Science, Osaka University, Toyonaka, Osaka 5608531, Japan
Lavallard P.:
Groupe de Physique des Solides, UMR 75 88, Universités Paris 6 et 7, 2 Pl. Jussieu, F-75251 Paris 05, France
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