Photoelectrochemical characterization of porous Si
Por:
Mathews N.R., Sebastian P.J., Mathew X., Agarwal V.
Publicada:
1 ene 2003
Resumen:
The photoelectrochemical measurements of p-Si and porous silicon in 0.1 M H2SO4 were done. The band gap of Si is a bit low for efficient hydrogen production. The silicon was made porous to improve the efficiency of hydrogen production. The porous silicon photocathodes show a substantial improvement in the hydrogen production compared to that of p-Si photocathodes. Studies were done by applying different light flux on the porous silicon. © 2002 International Association for Hydrogen Energy. Published by Elsevier Science Ltd. All eights reserved.
Filiaciones:
Mathews N.R.:
Ctro. de Invest. en Energía, UNAM, 62580 Temixco, Morelos, Mexico
Sebastian P.J.:
Ctro. de Invest. en Energía, UNAM, 62580 Temixco, Morelos, Mexico
Mathew X.:
Ctro. de Invest. en Energía, UNAM, 62580 Temixco, Morelos, Mexico
Agarwal V.:
Ctro. de Invest. en Energía, UNAM, 62580 Temixco, Morelos, Mexico
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