CdS roughness by Anti-Stokes Raman spectroscopy


Por: Molina-Contreras J.R., Medina-Gutiérrez C., Frausto-Reyes C., Calixto S.

Publicada: 1 ene 2006
Resumen:
A Raman system, with the 514.5 and 632.8 nm excitations wavelengths, was used to qualitatively detect the surface roughness of a CdS wafer sample. Anti-Stokes Raman spectra were obtained from several sample zones with different mean roughness levels, previously measured with Atomic Force Microscopy. Our results show that there is a spectrum profile which can be related to the sample roughness, which shows a better definition with the 514.5 nm excitation wavelength. copyright The Electrochemical Society.

Filiaciones:
Molina-Contreras J.R.:
 Departamento de Ingeniería Eléctrica y Electrónica, Instituto Tecnológico de Aguascalientes, Av. López Mateos 1081 Oriente, C.P. 20256. Aguascalientes, Ags., Mexico

Medina-Gutiérrez C.:
 Universidad de Guadalajara, Centro Universitario de Los Lagos, Av. Enrique Diaz de Leon s/n, C. P. 47460, Lagos de Moreno, Jal., Mexico

Frausto-Reyes C.:
 Centro de Investigaciones en Óptica A. C., Unidad Aguascalientes, Prolong., Constitución 607, C. P. 20200, Ags., Mexico

Calixto S.:
 Centro de Investigaciones en Óptica, A.C., Loma del Bosque 115, C. P. 37150 León, Guanajuato, Mexico
ISSN: 19385862
Editorial
Electrochemical Society Inc., 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA, Estados Unidos America
Tipo de documento: Conference Paper
Volumen: 3 Número: 5
Páginas: 399-406