Surface and texture characterization of thin-film ZnTe formed with pulsed-laser deposition


Por: Erlacher A., Lukaszew A.R., Jaeger H., Ullrich B.

Publicada: 1 ene 2006
Resumen:
Using thin-film semiconductors as active photonic interfaces, an all-optical laser digitizer can be realized. Based on these results, zinc telluride (ZnTe) has attracted our interest since it is an appealing semiconductor for applications in photonics. Low-temperature pulsed-laser deposition (PLD), i.e., without substrate heater, was employed to deposit amorphous thin-film ZnTe on silicon (Si) and glass substrates using either the 1064 or 532 nm emission lines of a nanosecond-pulsed Nd:YAG laser. In spite of the predominantly amorphous sample textures, x-ray-diffraction experiments and analysis of the surface roughness including outgrowth distribution using atomic force microscopy reveal major differences in surface morphology and crystal textures between samples formed at these two laser wavelengths. This indicates wavelength-dependent ablation and wavelength-dependent PLD mechanisms with nanosecond pulses. Our observations contribute to a better understanding of PLD and provide tools to fine-tune and optimize the optoelectronic and photonic properties of ZnTe amorphous thin films as well as their incorporation into Si-based technologies in order to fabricate cost-effective and functional optoelectronic devices. © 2006 American Vacuum Society.

Filiaciones:
Erlacher A.:
 Center for Materials Sciences, Department of Physics and Astronomy, Bowling Green State University, Bowling Green, OH 43403-0224, United States

 Center for Photochemical Sciences, Bowling Green State University, Bowling Green, OH 43403-0224, United States

 Institut für Experimentalphysik, Karl-Franzens Universität Grazx, A-8010 Graz, Austria

Lukaszew A.R.:
 Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606, United States

Jaeger H.:
 Department of Physics, Miami University, Oxford, OH 45056, United States

Ullrich B.:
 Center for Materials Sciences, Department of Physics and Astronomy, Bowling Green State University, Bowling Green, OH 43403-0224, United States

 Center for Photochemical Sciences, Bowling Green State University, Bowling Green, OH 43403-0224, United States
ISSN: 07342101
Editorial
American Inst of Physics, Woodbury, NY, United States, STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USA, Estados Unidos America
Tipo de documento: Article
Volumen: 24 Número: 4
Páginas: 1623-1626
WOS Id: 000239048100132