Dynamics of 3D representation of interfaces in UV-induced chemical vapor deposition: Experiments, modeling and simulation for silicon nitride thin layers
Por:
Flicstein J., Guillonneau E., Marquez J., Chun L.S.H.K., Maisonneuve D., David C., Wang Z.Z., Palmier J.F., Courant J.L.
Publicada:
1 ene 2000
Resumen:
We study the surface dynamics of silicon nitride films deposited by UV-induced low pressure chemical vapor pressure. Atomic force microscopy measurements show that the surface reaches a scale invariant stationary state coherent with the Kardar-Parisi-Zhang (KPZ) equation. Discrete geometry techniques are oriented to extract morphological characteristics of surface (e.g. roughness) and bulk (e.g. porosity) which corresponds to computer simulated photodeposits. This allows to determine the physical origin of KPZ scaling to be a low value of the surface sticking probability, and connected to the surface concentration of active charged centers (ACCs), which permits to start the evaluation of the Monte Carlo-molecular dynamics simulator.
Filiaciones:
Flicstein J.:
France Telecom C.N.E.T., DTD Laboratoire CDP, CNRS URA 250, 196, ave. H. Ravera, 92225 Bagneux, France
Guillonneau E.:
France Telecom C.N.E.T., DTD Laboratoire CDP, CNRS URA 250, 196, ave. H. Ravera, 92225 Bagneux, France
Marquez J.:
ENS. T rue Barrault, Paris, France
Chun L.S.H.K.:
Opto+ Groupement d'Intérêt Economique, Route de Nozay, 91460 Marcoussis, France
Maisonneuve D.:
France Telecom C.N.E.T., DTD Laboratoire CDP, CNRS URA 250, 196, ave. H. Ravera, 92225 Bagneux, France
David C.:
CNRS L2M, Bagneux, France
Wang Z.Z.:
CNRS L2M, Bagneux, France
Palmier J.F.:
Opto+ Groupement d'Intérêt Economique, Route de Nozay, 91460 Marcoussis, France
Courant J.L.:
Opto+ Groupement d'Intérêt Economique, Route de Nozay, 91460 Marcoussis, France
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