Deposition of aluminium nitride coatings using a cold wall CVD reactor
Por:
Armas B., De Icaza Herrera M., Sibieude F.
Publicada:
1 ene 2000
Resumen:
Aluminium nitride was obtained in a cold wall reactor using AlCl3 and NH3 as precursors and N2 as a carrier gas. AlCl3 was synthesized in situ by means of an original method based on the SiCl4(g) reaction on Al(s). The substrate used is a cylinder of graphite coated with SiC and heated by high frequency induction. The deposition rate was studied as a function of temperature in the range 900-1500°C, the total pressure varying from 2 to 180 hPa. At low temperatures an Arrhenius type representation of the kinetics for several pressures indicated a thermally activated behaviour with an apparent activation energy of about 80 kJ mol-1. At high deposition temperatures the deposition rate was almost constant, indicating that the growth is controlled by the diffusion process. The influence of gas composition and total AlCl3 flow rate was also discussed. The different layers were characterized particularly by means of X-ray diffraction and scanning electron microscopy. The influence of temperature and total pressure on crystallization and morphology was studied. (C) 2000 Elsevier Science S.A. All rights reserved.
Filiaciones:
Armas B.:
Inst. Sci. Genie Mat. Procedes - C., BP5 - Odeillo, F 66125, Font Romeu, France
De Icaza Herrera M.:
Inst. Sci. Genie Mat. Procedes - C., BP5 - Odeillo, F 66125, Font Romeu, France
Sibieude F.:
Inst. Sci. Genie Mat. Procedes - C., BP5 - Odeillo, F 66125, Font Romeu, France
|